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Nanya Technology NT4GC72B4NA1NL-CG 4GB
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB vs Gold Key Technology Co Ltd GKE400SO51216-2400 4GB

总分
star star star star star
Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

总分
star star star star star
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB

Gold Key Technology Co Ltd GKE400SO51216-2400 4GB

差异 规格 评论

差异

Nanya Technology NT4GC72B4NA1NL-CG 4GB 需要考虑的原因
Nanya Technology NT4GC72B4NA1NL-CG 4GB
报告一个错误
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB 需要考虑的原因
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 42
    左右 -14% 更低的延时
  • 更快的读取速度，GB/s
    15.4 left arrow 10.6
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.4 left arrow 7.8
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 37
  • 读取速度，GB/s
    10.6 left arrow 15.4
  • 写入速度，GB/s
    7.8 left arrow 12.4
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2150 left arrow 2356

Nanya Technology NT4GC72B4NA1NL-CG 4GB RAM的比较

Elpida EBJ41EF8BCFA-DJ-F 4GB
Samsung M378A2K43BB1-CPB 16GB

Gold Key Technology Co Ltd GKE400SO51216-2400 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
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Crucial Technology CT4G4SFS8213.C8FBR2 4GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology CT8G4SFD824AC16FBD1 8GB
Crucial Technology CT8G4SFD824AC16FBD1 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB
Gold Key Technology Co Ltd GKE400SO51216-2400 4GB
内存RAM
A-DATA Technology DDR3L 1333G 4GB
A-DATA Technology DDR3L 1333G 4GB
Samsung M393A4K40BB1-CRC 32GB
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内存RAM
Samsung M471B5273DH0-CH9 4GB
Samsung M471B5273DH0-CH9 4GB
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Kingston 9965596-019.B01G 4GB
内存RAM
Kingston 9905702-010.A00G 8GB
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Corsair CMK16GX4M2A2800C16 8GB
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内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Apacer Technology 76.C102G.D170B 8GB
Apacer Technology 76.C102G.D170B 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
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Corsair CMK64GX4M4E3200C16 16GB
内存RAM
Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
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内存RAM
SK Hynix HYMP112S64CP6-S6 1GB
SK Hynix HYMP112S64CP6-S6 1GB
Corsair CMK8GX4M2B4000C19 4GB
Corsair CMK8GX4M2B4000C19 4GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
Kingston KHYXPX-MID 8GB
Kingston KHYXPX-MID 8GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
G Skill Intl F4-2400C17-8GVR 8GB
G Skill Intl F4-2400C17-8GVR 8GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
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G Skill Intl F4-3200C14-32GTRS 32GB
内存RAM
Kingston 2GB-DDR2 800Mhz 2GB
Kingston 2GB-DDR2 800Mhz 2GB
G Skill Intl F4-2400C15-16GIS 16GB
G Skill Intl F4-2400C15-16GIS 16GB
内存RAM