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Nanya Technology NT4GC72B4NA1NL-CG 4GB
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB vs Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

总分
star star star star star
Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

总分
star star star star star
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB

差异 规格 评论

差异

Nanya Technology NT4GC72B4NA1NL-CG 4GB 需要考虑的原因
Nanya Technology NT4GC72B4NA1NL-CG 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    42 left arrow 77
    左右 45% 更低的延时
  • 更快的写入速度，GB/s
    7.8 left arrow 5.5
    测试中的平均数值
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB 需要考虑的原因
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
报告一个错误
  • 更快的读取速度，GB/s
    13.1 left arrow 10.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    42 left arrow 77
  • 读取速度，GB/s
    10.6 left arrow 13.1
  • 写入速度，GB/s
    7.8 left arrow 5.5
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2150 left arrow 1440

Nanya Technology NT4GC72B4NA1NL-CG 4GB RAM的比较

Elpida EBJ41EF8BCFA-DJ-F 4GB
Samsung M378A2K43BB1-CPB 16GB

Hoodisk Electronics Co Ltd MD401GNSE-CB3M2 8GB RAM的比较

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Kingston KHX1600C9D3/4GX 4GB
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内存RAM