Nanya Technology NT4GC72B4NA1NL-CG 4GB vs Micron Technology 4ATF51264HZ-2G3E1 4GB

总分

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

总分

Micron Technology 4ATF51264HZ-2G3E1 4GB

Micron Technology 4ATF51264HZ-2G3E1 4GB

差异规格评论

差异

Nanya Technology NT4GC72B4NA1NL-CG 4GB

需要考虑的原因
Nanya Technology NT4GC72B4NA1NL-CG 4GB

报告一个错误

Micron Technology 4ATF51264HZ-2G3E1 4GB

需要考虑的原因
Micron Technology 4ATF51264HZ-2G3E1 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 42

左右 -56% 更低的延时
更快的读取速度，GB/s

14.8 10.6

测试中的平均数值
更快的写入速度，GB/s

10.2 7.8

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Micron Technology 4ATF51264HZ-2G3E1 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 27
读取速度，GB/s

10.6 14.8
写入速度，GB/s

7.8 10.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2150 2173

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

Avexir Technologies Corporation DDR4-3200 CL16 8GB 8GB

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Micron Technology 8ATF2G64HZ-3G2E2 16GB

Kingston 9905701-017.A00G 16GB

Kingston 9905701-017.A00G 16GB

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Kingston 99U5584-005.A00LF 4GB

Crucial Technology CT8G4SFS824A.C8FP 8GB

Crucial Technology CT8G4SFS824A.C8FP 8GB

Samsung M4 70T5663CZ3-CE6 2GB

Samsung M4 70T5663CZ3-CE6 2GB

Corsair CMK16GX4M2A2400C16 8GB

Corsair CMK16GX4M2A2400C16 8GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Corsair CMK16GX4M4B3866C18 4GB

Corsair CMK16GX4M4B3866C18 4GB

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SK Hynix HMT325S6BFR8C-H9 2GB

Corsair CMD64GX4M8B2800C14 8GB

Corsair CMD64GX4M8B2800C14 8GB