Nanya Technology NT4GC72B4NA1NL-CG 4GB vs SK Hynix HMA82GU6MFR8N-TF 16GB

总分

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

总分

SK Hynix HMA82GU6MFR8N-TF 16GB

SK Hynix HMA82GU6MFR8N-TF 16GB

差异规格评论

差异

Nanya Technology NT4GC72B4NA1NL-CG 4GB

需要考虑的原因
Nanya Technology NT4GC72B4NA1NL-CG 4GB

报告一个错误

SK Hynix HMA82GU6MFR8N-TF 16GB

需要考虑的原因
SK Hynix HMA82GU6MFR8N-TF 16GB

报告一个错误

低于PassMark测试中的延时，ns

34 42

左右 -24% 更低的延时
更快的读取速度，GB/s

13.9 10.6

测试中的平均数值
更快的写入速度，GB/s

8.5 7.8

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC72B4NA1NL-CG 4GB

SK Hynix HMA82GU6MFR8N-TF 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 34
读取速度，GB/s

10.6 13.9
写入速度，GB/s

7.8 8.5
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2150 2504

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

SK Hynix HMA82GU6MFR8N-TF 16GB

SK Hynix HMA82GU6MFR8N-TF 16GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Kingston 99U5723-002.A00G 8GB

Kingston 99U5723-002.A00G 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M474A1G43DB0-CPB 8GB

Samsung M474A1G43DB0-CPB 8GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N

Crucial Technology CT51264BA160B.C16F 4GB

Crucial Technology CT51264BA160B.C16F 4GB

Kingston ACR512X64D3U16C11G 4GB

Kingston ACR512X64D3U16C11G 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Crucial Technology CT51264AC800.C16FC 4GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Kllisre KRE-D3U1600M/8G 8GB

Kllisre KRE-D3U1600M/8G 8GB

Crucial Technology BL8G32C16U4BL.8FE 8GB

Crucial Technology BL8G32C16U4BL.8FE 8GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Corsair CMWX8GD3600C18W4 8GB

Corsair CMWX8GD3600C18W4 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Samsung M392A4K40BM0-CRC 32GB

Samsung M392A4K40BM0-CRC 32GB

Kingston KF552C40-16 16GB

Kingston KF552C40-16 16GB

Crucial Technology BLS8G4D30AESBK.M8FE 8GB

Crucial Technology BLS8G4D30AESBK.M8FE 8GB

A-DATA Technology DDR3 1333G 2GB

A-DATA Technology DDR3 1333G 2GB

Corsair CMK16GX4M2A2800C16 8GB

Corsair CMK16GX4M2A2800C16 8GB

SK Hynix HMT31GR7BFR4C-H9 8GB

SK Hynix HMT31GR7BFR4C-H9 8GB

Patriot Memory (PDP Systems) PSD416G24002S 16GB

Patriot Memory (PDP Systems) PSD416G24002S 16GB

G Skill Intl F3-1866C8-8GTX 8GB

G Skill Intl F3-1866C8-8GTX 8GB

Samsung M471A2K43CB1-CTCT 16GB

Samsung M471A2K43CB1-CTCT 16GB

Kingston 99U5474-023.A00LF 4GB

Kingston 99U5474-023.A00LF 4GB

Crucial Technology CT16G4DFD824A.C16FHD 16GB

Crucial Technology CT16G4DFD824A.C16FHD 16GB