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Nanya Technology NT4GC72B4NA1NL-CG 4GB
Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
比较
Nanya Technology NT4GC72B4NA1NL-CG 4GB vs Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
总分
Nanya Technology NT4GC72B4NA1NL-CG 4GB
总分
Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT4GC72B4NA1NL-CG 4GB
报告一个错误
需要考虑的原因
Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
报告一个错误
低于PassMark测试中的延时,ns
25
42
左右 -68% 更低的延时
更快的读取速度,GB/s
20.2
10.6
测试中的平均数值
更快的写入速度,GB/s
18.1
7.8
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
42
25
读取速度,GB/s
10.6
20.2
写入速度,GB/s
7.8
18.1
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2150
4046
Nanya Technology NT4GC72B4NA1NL-CG 4GB RAM的比较
Elpida EBJ41EF8BCFA-DJ-F 4GB
Samsung M378A2K43BB1-CPB 16GB
Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
PNY Electronics PNY 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
G Skill Intl F4-4000C14-16GTZR 16GB
Kingston XK2M26-MIE 16GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB
Kingston KP223C-ELD 2GB
DSL Memory D4SS1G082SH21A-B 16GB
TwinMOS 8DPT5MK8-TATP 2GB
Kingston 9905713-008.A00G 4GB
Kingston 99U5584-007.A00LF 4GB
G Skill Intl F4-2400C15-4GVR 4GB
Samsung M471B5674QH0-YK0 2GB
Crucial Technology CT16G4SFD8213.C16FAD 16GB
Kingston 9905469-143.A00LF 4GB
Kingston 9905625-074.A00G 16GB
Samsung M3 78T2863QZS-CF7 1GB
V-GEN D4R8GL24A8R 8GB
Nanya Technology M2X4G64CB88CHN-DG 4GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
PNY Electronics PNY 2GB
Crucial Technology CT16G4SFD8213.C16FDD 16GB
Samsung M393B2G70BH0-CH9 16GB
G Skill Intl F4-2400C15-8GIS 8GB
Kingston 99U5403-465.A00LF 8GB
G Skill Intl F4-3200C14-32GTZR 32GB
Kingston KVR533D2N4 512MB
Wilk Elektronik S.A. GY2400D464L15S/8G 8GB
Samsung M471B5773DH0-CH9 2GB
Wilk Elektronik S.A. IRH2666D464L19S/8G 8GB
报告一个错误
×
Bug description
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