Nanya Technology NT4GC72B4NA1NL-CG 4GB

Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB vs Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB

总分

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

总分

Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB

Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB

差异规格评论

差异

Nanya Technology NT4GC72B4NA1NL-CG 4GB

需要考虑的原因
Nanya Technology NT4GC72B4NA1NL-CG 4GB

报告一个错误

Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB

需要考虑的原因
Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB

报告一个错误

低于PassMark测试中的延时，ns

26 42

左右 -62% 更低的延时
更快的读取速度，GB/s

18.6 10.6

测试中的平均数值
更快的写入速度，GB/s

16.2 7.8

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Thermaltake Technology Co Ltd R019D408GX2-3200C16A 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 26
读取速度，GB/s

10.6 18.6
写入速度，GB/s

7.8 16.2
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2150 3756

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Corsair CMW16GX4M2D3600C16 8GB

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Micron Technology 8ATF1G64HZ-3G2R1 8GB

ASint Technology SSA302G08-EGN1C 4GB

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Kingston KF3600C16D4/8GX 8GB

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Samsung M393B1G70BH0-CK0 8GB

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Neo Forza NMUD416E82-3600 16GB

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Corsair CM3X8GA2400C11Y2R 8GB

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Kingston 9905630-018.A00G 8GB