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Nanya Technology NT4GC72B4NA1NL-CG 4GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB
比较
Nanya Technology NT4GC72B4NA1NL-CG 4GB vs Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB
总分
Nanya Technology NT4GC72B4NA1NL-CG 4GB
总分
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT4GC72B4NA1NL-CG 4GB
报告一个错误
低于PassMark测试中的延时,ns
42
73
左右 42% 更低的延时
需要考虑的原因
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB
报告一个错误
更快的读取速度,GB/s
15.2
10.6
测试中的平均数值
更快的写入速度,GB/s
9.1
7.8
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
42
73
读取速度,GB/s
10.6
15.2
写入速度,GB/s
7.8
9.1
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2150
1843
Nanya Technology NT4GC72B4NA1NL-CG 4GB RAM的比较
Elpida EBJ41EF8BCFA-DJ-F 4GB
Samsung M378A2K43BB1-CPB 16GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB RAM的比较
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-156.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology CT4G4DFS824A.C8FBD2 4GB
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Kingston 9965525-018.A00LF 4GB
Crucial Technology 16G4UD2400.C16BD1 16GB
Samsung M471A5244CB0-CWE 4GB
A-DATA Technology AO1P21FC8T1-BSKS 8GB
Crucial Technology CT51264BD160B.C16F 4GB
Corsair CM4X8GF2666Z16K4 8GB
A-DATA Technology DDR2 800G 2GB
Kingston 9905701-011.A00G 16GB
报告一个错误
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Bug description
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