Nanya Technology NT512T64U88B0BY-3C 512MB vs Crucial Technology BL16G32C16U4W.M16FE1 16GB

总分

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分

Crucial Technology BL16G32C16U4W.M16FE1 16GB

Crucial Technology BL16G32C16U4W.M16FE1 16GB

差异规格评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB

需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB

报告一个错误

更快的读取速度，GB/s

2 18.2

测试中的平均数值

Crucial Technology BL16G32C16U4W.M16FE1 16GB

需要考虑的原因
Crucial Technology BL16G32C16U4W.M16FE1 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 71

左右 -154% 更低的延时
更快的写入速度，GB/s

15.1 1,322.6

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT512T64U88B0BY-3C 512MB

Crucial Technology BL16G32C16U4W.M16FE1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

71 28
读取速度，GB/s

2,831.6 18.2
写入速度，GB/s

1,322.6 15.1
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

399 3666

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMD64GX4M4B3333C16 16GB

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SK Hynix HMA851S6CJR6N-VK 4GB

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AMD R534G1601U1S-UO 4GB

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Team Group Inc. TEAMGROUP-UD4-4500 8GB

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Kingston KF560C40-16 16GB

Kingston HP26D4U9S8ME-8 8GB

Kingston HP26D4U9S8ME-8 8GB

Corsair CMY16GX3M4A2133C8 4GB

Corsair CMY16GX3M4A2133C8 4GB

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Avexir Technologies Corporation DDR4-3000 CL15 8GB 8GB

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Samsung M393B1K70QB0-CK0 8GB

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STEC (Silicon Tech) S1024R3NN2QK-I 1GB

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Crucial Technology CT8G4DFD824A.C16FBD1 8GB