Nanya Technology NT512T64U88B0BY-3C 512MB vs G Skill Intl F4-2133C15-4GRK 4GB

总分

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分

G Skill Intl F4-2133C15-4GRK 4GB

G Skill Intl F4-2133C15-4GRK 4GB

差异规格评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB

需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB

报告一个错误

更快的读取速度，GB/s

2 13.5

测试中的平均数值

G Skill Intl F4-2133C15-4GRK 4GB

需要考虑的原因
G Skill Intl F4-2133C15-4GRK 4GB

报告一个错误

低于PassMark测试中的延时，ns

27 71

左右 -163% 更低的延时
更快的写入速度，GB/s

10.7 1,322.6

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT512T64U88B0BY-3C 512MB

G Skill Intl F4-2133C15-4GRK 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

71 27
读取速度，GB/s

2,831.6 13.5
写入速度，GB/s

1,322.6 10.7
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

399 2689

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HYMP112U64CP8-S6 1GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Corsair CMK32GX4M2C3000C16 16GB

Corsair CMK32GX4M2C3000C16 16GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

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G Skill Intl F4-2666C19-8GSXK 8GB

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PNY Electronics PNY 2GB

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Kingston XJ69DF-MIE 8GB