Nanya Technology NT512T64U88B0BY-3C 512MB vs G Skill Intl F4-3600C18-8GTRS 8GB

总分

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分

G Skill Intl F4-3600C18-8GTRS 8GB

G Skill Intl F4-3600C18-8GTRS 8GB

差异规格评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB

需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB

报告一个错误

更快的读取速度，GB/s

2 18.6

测试中的平均数值

G Skill Intl F4-3600C18-8GTRS 8GB

需要考虑的原因
G Skill Intl F4-3600C18-8GTRS 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 71

左右 -154% 更低的延时
更快的写入速度，GB/s

15.8 1,322.6

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT512T64U88B0BY-3C 512MB

G Skill Intl F4-3600C18-8GTRS 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

71 28
读取速度，GB/s

2,831.6 18.6
写入速度，GB/s

1,322.6 15.8
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

399 3716

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3600C18-8GTRS 8GB

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Kingston 9905403-156.A00LF 2GB

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Samsung M393B1G70BH0-YK0 8GB

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G Skill Intl F4-3200C14-16GTZDCB 16GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

G Skill Intl F4-3200C16-32GTRG 32GB

G Skill Intl F4-3200C16-32GTRG 32GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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G Skill Intl F4-3000C15-8GRBB 8GB

Samsung M3 78T5663RZ3-CF7 2GB

Samsung M3 78T5663RZ3-CF7 2GB

Corsair CMH16GX4M2D3600C18 8GB

Corsair CMH16GX4M2D3600C18 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Ramaxel Technology RMSA3300MH78HBF-2666 16GB

Ramaxel Technology RMSA3300MH78HBF-2666 16GB