Nanya Technology NT512T64U88B0BY-3C 512MB vs Gold Key Technology Co Ltd NMUD416E82-4400G 16GB

总分

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分

Gold Key Technology Co Ltd NMUD416E82-4400G 16GB

Gold Key Technology Co Ltd NMUD416E82-4400G 16GB

差异规格评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB

需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB

报告一个错误

Gold Key Technology Co Ltd NMUD416E82-4400G 16GB

需要考虑的原因
Gold Key Technology Co Ltd NMUD416E82-4400G 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 71

左右 -154% 更低的延时
更快的读取速度，GB/s

20.3 2

测试中的平均数值
更快的写入速度，GB/s

17.3 1,322.6

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT512T64U88B0BY-3C 512MB

Gold Key Technology Co Ltd NMUD416E82-4400G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

71 28
读取速度，GB/s

2,831.6 20.3
写入速度，GB/s

1,322.6 17.3
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

399 3762

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

SK Hynix HMT325S6CFR8C-PB 2GB

SK Hynix HMT325S6CFR8C-PB 2GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N-UH 16GB

Hynix Semiconductor (Hyundai Electronics) HMA42GR7AFR4N

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Micron Technology 16ATF4G64AZ-2G6B1 32GB

Micron Technology 16ATF4G64AZ-2G6B1 32GB

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Gold Key Technology Co Ltd NMUD416E82-4400G 16GB

Gold Key Technology Co Ltd NMUD416E82-4400G 16GB

Kingston KHX3200C18D4/8G 8GB

Kingston KHX3200C18D4/8G 8GB

Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB

Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Crucial Technology CT51264BA1339.C16F 4GB

Micron Technology V-GeN D4V16GL24A8R 16GB

Micron Technology V-GeN D4V16GL24A8R 16GB

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

Corsair CMW32GX4M4D3600C16 8GB

Corsair CMW32GX4M4D3600C16 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

G Skill Intl F4-2133C15-8GRR2 8GB

G Skill Intl F4-2133C15-8GRR2 8GB

Qimonda 64T128020EDL2.5C2 1GB

Qimonda 64T128020EDL2.5C2 1GB

Kingston 9905744-076.A00G 16GB

Kingston 9905744-076.A00G 16GB

Kingston ACR512X64D3S13C9G 4GB

Kingston ACR512X64D3S13C9G 4GB

G Skill Intl F4-3600C18-16GTZN 16GB

G Skill Intl F4-3600C18-16GTZN 16GB

Kingston 99U5471-012.A00LF 4GB

Kingston 99U5471-012.A00LF 4GB

Micron Technology 4ATF1G64AZ-3G2E1 8GB

Micron Technology 4ATF1G64AZ-3G2E1 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMD32GX4M2C3200C14T 16GB

Corsair CMD32GX4M2C3200C14T 16GB

Kingston 99U5471-030.A00LF 8GB

Kingston 99U5471-030.A00LF 8GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

InnoDisk Corporation M4S0-8GSSOCRG 8GB

InnoDisk Corporation M4S0-8GSSOCRG 8GB

Kingston 9905584-016.A00LF 4GB

Kingston 9905584-016.A00LF 4GB

Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB

Chun Well Technology Holding Limited CL17-17-17 D4-2400