Nanya Technology NT512T64U88B0BY-3C 512MB vs Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

总分

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分

Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

差异规格评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB

需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB

报告一个错误

Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

需要考虑的原因
Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

报告一个错误

低于PassMark测试中的延时，ns

33 71

左右 -115% 更低的延时
更快的读取速度，GB/s

20.1 2

测试中的平均数值
更快的写入速度，GB/s

13.7 1,322.6

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT512T64U88B0BY-3C 512MB

Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

71 33
读取速度，GB/s

2,831.6 20.1
写入速度，GB/s

1,322.6 13.7
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

399 3260

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

Gold Key Technology Co Ltd NMUD480E82-3000D 8GB

A-DATA Technology DDR3 1600 4GB

A-DATA Technology DDR3 1600 4GB

Apacer Technology 78.DAGP2.4030B 16GB

Apacer Technology 78.DAGP2.4030B 16GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Transcend Information JM3200HSE-32G 32GB

Transcend Information JM3200HSE-32G 32GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Crucial Technology BL8G26C16U4W.8FD 8GB

Crucial Technology BL8G26C16U4W.8FD 8GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Micron Technology 8JSF25664HZ-1G4D1 2GB

Kingston KCDT82-MIE 4GB

Kingston KCDT82-MIE 4GB

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

Crucial Technology CT16G4SFD8266.M16FJ 16GB

Crucial Technology CT16G4SFD8266.M16FJ 16GB

AMD R538G1601U2S 8GB

AMD R538G1601U2S 8GB

Kingston 9905665-017.A00G 4GB

Kingston 9905665-017.A00G 4GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

G Skill Intl F4-3600C16-8GTRGC 8GB

G Skill Intl F4-3600C16-8GTRGC 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Patriot Memory (PDP Systems) 2800 C16 Series 8GB

Patriot Memory (PDP Systems) 2800 C16 Series 8GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

Corsair CMD64GX4M4C3000C15 16GB

Corsair CMD64GX4M4C3000C15 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

Corsair CMK32GX4M4D3600C18 8GB

Corsair CMK32GX4M4D3600C18 8GB

Kingston 9905403-011.A03LF 2GB

Kingston 9905403-011.A03LF 2GB

Corsair CMK16GX4M2D2666C16 8GB

Corsair CMK16GX4M2D2666C16 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Micron Technology 16ATF4G64AZ-3G2E1 32GB

Micron Technology 16ATF4G64AZ-3G2E1 32GB