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Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston KHX2666C15/8G 8GB
比较
Nanya Technology NT512T64U88B0BY-3C 512MB vs Kingston KHX2666C15/8G 8GB
总分
Nanya Technology NT512T64U88B0BY-3C 512MB
总分
Kingston KHX2666C15/8G 8GB
差异
规格
评论
差异
需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB
报告一个错误
更快的读取速度,GB/s
2
14.9
测试中的平均数值
需要考虑的原因
Kingston KHX2666C15/8G 8GB
报告一个错误
低于PassMark测试中的延时,ns
39
71
左右 -82% 更低的延时
更快的写入速度,GB/s
10.1
1,322.6
测试中的平均数值
更高的内存带宽,mbps
21300
5300
左右 4.02 更高的带宽
规格
完整的技术规格清单
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston KHX2666C15/8G 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
71
39
读取速度,GB/s
2,831.6
14.9
写入速度,GB/s
1,322.6
10.1
内存带宽,mbps
5300
21300
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
399
2519
Nanya Technology NT512T64U88B0BY-3C 512MB RAM的比较
Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB
Kingston KHX2666C15/8G 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1G70BH0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
G Skill Intl F5-6400J3239G16G 16GB
Apacer Technology 78.C1GM3.C7W0B 8GB
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology BLM8G40C18U4BL.M8FE1 8GB
Samsung M386B4G70DM0-CMA4 32GB
Kingston 9905599-025.A00G 8GB
Kingston 9905471-001.A01LF 2GB
Avant Technology J644GU44J9266NQ 32GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Samsung M471A1K43EB1-CWE 8GB
Samsung M393B2G70BH0-CH9 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2400 16GB
G Skill Intl F3-1866C8-8GTX 8GB
Kingston 9905624-033.A00G 8GB
Kingston KHX1600C9D3/4G 4GB
Crucial Technology BLS16G4D240FSE.16FD 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Mushkin MR[A/B]4U346GJJM8G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3200C14-8GTRS 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMD16GX4M2A2400C14 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Crucial Technology CT32G4DFD832A.C16FE 32GB
Corsair CMZ16GX3M2A2400C10 8GB
G Skill Intl F4-4000C18-8GTRS 8GB
Samsung M393B5270CH0-CH9 4GB
Kingston 99P5723-006.A00G 8GB
报告一个错误
×
Bug description
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