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Nanya Technology NT512T64U88B0BY-3C 512MB
Micron Technology TEAMGROUP-UD4-3000 16GB

Nanya Technology NT512T64U88B0BY-3C 512MB vs Micron Technology TEAMGROUP-UD4-3000 16GB

总分
star star star star star
Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分
star star star star star
Micron Technology TEAMGROUP-UD4-3000 16GB

Micron Technology TEAMGROUP-UD4-3000 16GB

差异 规格 评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB 需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 17
    测试中的平均数值
Micron Technology TEAMGROUP-UD4-3000 16GB 需要考虑的原因
Micron Technology TEAMGROUP-UD4-3000 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 71
    左右 -223% 更低的延时
  • 更快的写入速度，GB/s
    11.9 left arrow 1,322.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT512T64U88B0BY-3C 512MB
Micron Technology TEAMGROUP-UD4-3000 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    71 left arrow 22
  • 读取速度，GB/s
    2,831.6 left arrow 17.0
  • 写入速度，GB/s
    1,322.6 left arrow 11.9
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    399 left arrow 3112

Nanya Technology NT512T64U88B0BY-3C 512MB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB

Micron Technology TEAMGROUP-UD4-3000 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Micron Technology TEAMGROUP-UD4-3000 16GB
Micron Technology TEAMGROUP-UD4-3000 16GB
内存RAM
Kingston ACR16D3LS1NGG/4G 4GB
Kingston ACR16D3LS1NGG/4G 4GB
Mushkin MR[A/B]4U280HHHH8G 8GB
Mushkin MR[A/B]4U280HHHH8G 8GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
G Skill Intl F4-3200C16-8GTZKO 8GB
G Skill Intl F4-3200C16-8GTZKO 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Apacer Technology 78.D2GF2.4010B 16GB
Apacer Technology 78.D2GF2.4010B 16GB
内存RAM
Samsung M3 78T5663RZ3-CE6 2GB
Samsung M3 78T5663RZ3-CE6 2GB
Crucial Technology CT16G4SFD8266.C16FJ 16GB
Crucial Technology CT16G4SFD8266.C16FJ 16GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
V-GEN D4S8GL30A8TS5 8GB
V-GEN D4S8GL30A8TS5 8GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
Corsair CM4X4GF2666Z16K4 4GB
Corsair CM4X4GF2666Z16K4 4GB
内存RAM
SK Hynix HMT42GR7AFR4A-PB 16GB
SK Hynix HMT42GR7AFR4A-PB 16GB
Ramsta Ramsta-2400Mhz-4G 4GB
Ramsta Ramsta-2400Mhz-4G 4GB
内存RAM
PUSKILL DDR3 1600 8G 8GB
PUSKILL DDR3 1600 8G 8GB
G Skill Intl F4-3600C19-8GTZRB 8GB
G Skill Intl F4-3600C19-8GTZRB 8GB
内存RAM
A-DATA Technology DOVF1B163G2G 2GB
A-DATA Technology DOVF1B163G2G 2GB
Crucial Technology BLS8G4D30CESTK.8FD 8GB
Crucial Technology BLS8G4D30CESTK.8FD 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Kingston HP32D4U8S8HC-8X 8GB
Kingston HP32D4U8S8HC-8X 8GB
内存RAM
Samsung M378A5244CB0-CTD 4GB
Samsung M378A5244CB0-CTD 4GB
Corsair CMU32GX4M4A2666C16 8GB
Corsair CMU32GX4M4A2666C16 8GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
Samsung M4 70T2864AZ3-CE6 1GB
Samsung M4 70T2864AZ3-CE6 1GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Crucial Technology BLS8G4D240FSC.16FBD2 8GB
Crucial Technology BLS8G4D240FSC.16FBD2 8GB
内存RAM