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Nanya Technology NT512T64U88B0BY-3C 512MB
Samsung M471A1A43CB1-CRC 8GB

Nanya Technology NT512T64U88B0BY-3C 512MB vs Samsung M471A1A43CB1-CRC 8GB

总分
star star star star star
Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分
star star star star star
Samsung M471A1A43CB1-CRC 8GB

Samsung M471A1A43CB1-CRC 8GB

差异 规格 评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB 需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB
报告一个错误
  • 更快的读取速度，GB/s
    2 left arrow 11.2
    测试中的平均数值
Samsung M471A1A43CB1-CRC 8GB 需要考虑的原因
Samsung M471A1A43CB1-CRC 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 71
    左右 -163% 更低的延时
  • 更快的写入速度，GB/s
    5.4 left arrow 1,322.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Nanya Technology NT512T64U88B0BY-3C 512MB
Samsung M471A1A43CB1-CRC 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    71 left arrow 27
  • 读取速度，GB/s
    2,831.6 left arrow 11.2
  • 写入速度，GB/s
    1,322.6 left arrow 5.4
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    399 left arrow 1774

Nanya Technology NT512T64U88B0BY-3C 512MB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP564U64EP8-S5 512MB
G Skill Intl F4-3200C16-16GTZSK 16GB

Samsung M471A1A43CB1-CRC 8GB RAM的比较

Crucial Technology CT51264BD1339.M16F 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Essencore Limited IM48GU48N21-FFFHM 8GB
内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Samsung M471A1A43CB1-CRC 8GB
Samsung M471A1A43CB1-CRC 8GB
内存RAM
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Crucial Technology CT102464BF160B.C16 8GB
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内存RAM
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内存RAM
Samsung M386B4G70DM0-CMA4 32GB
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内存RAM
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内存RAM
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SK Hynix HMA81GU6AFR8N-UH 8GB
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Micron Technology 4ATF1G64HZ-3G2E2 8GB
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Kingston 9905701-017.A00G 16GB
内存RAM
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A-DATA Technology DDR4 3200 8GB
内存RAM
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Corsair CMSX16GX4M2A2400C16 8GB
Corsair CMSX16GX4M2A2400C16 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
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Crucial Technology BL16G32C16U4W.M16FE1 16GB
内存RAM
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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston KTD3KX-MIB 8GB
Kingston KTD3KX-MIB 8GB
内存RAM
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Elpida EBJ40EG8BFWB-JS-F 4GB
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Corsair CMU32GX4M2C3333C16 16GB
内存RAM