Nanya Technology NT512T64U88B0BY-3C 512MB vs SK Hynix HMA81GS6CJR8N-UH 8GB

总分

Nanya Technology NT512T64U88B0BY-3C 512MB

Nanya Technology NT512T64U88B0BY-3C 512MB

总分

SK Hynix HMA81GS6CJR8N-UH 8GB

SK Hynix HMA81GS6CJR8N-UH 8GB

差异规格评论

差异

Nanya Technology NT512T64U88B0BY-3C 512MB

需要考虑的原因
Nanya Technology NT512T64U88B0BY-3C 512MB

报告一个错误

更快的读取速度，GB/s

2 14.6

测试中的平均数值

SK Hynix HMA81GS6CJR8N-UH 8GB

需要考虑的原因
SK Hynix HMA81GS6CJR8N-UH 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 71

左右 -184% 更低的延时
更快的写入速度，GB/s

6.8 1,322.6

测试中的平均数值
更高的内存带宽，mbps

19200 5300

左右 3.62 更高的带宽

规格

完整的技术规格清单

Nanya Technology NT512T64U88B0BY-3C 512MB

SK Hynix HMA81GS6CJR8N-UH 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

71 25
读取速度，GB/s

2,831.6 14.6
写入速度，GB/s

1,322.6 6.8
内存带宽，mbps

5300 19200

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 667 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

399 2073

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Smart Modular SH564128FH8N0QHSCG 4GB

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Kingston 9905663-006.A00G 16GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

Crucial Technology BLT2G3D1608DT1TX0 2GB

G Skill Intl F4-3733C17-8GTZA 8GB

G Skill Intl F4-3733C17-8GTZA 8GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Kingston KHX3000C16D4/32GX 32GB

Kingston KHX3000C16D4/32GX 32GB

A-DATA Technology DQKD1A08 1GB

A-DATA Technology DQKD1A08 1GB

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Micron Technology 9ASF1G72AZ-2G3B1 8GB