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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMD32GX4M4A2666C15 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Corsair CMD32GX4M4A2666C15 8GB

总分
star star star star star
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分
star star star star star
Corsair CMD32GX4M4A2666C15 8GB

Corsair CMD32GX4M4A2666C15 8GB

差异 规格 评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB 需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
报告一个错误
Corsair CMD32GX4M4A2666C15 8GB 需要考虑的原因
Corsair CMD32GX4M4A2666C15 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15.8 left arrow 13.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.4 left arrow 9.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMD32GX4M4A2666C15 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 35
  • 读取速度，GB/s
    13.7 left arrow 15.8
  • 写入速度，GB/s
    9.6 left arrow 12.4
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2312 left arrow 3164

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB RAM的比较

SK Hynix HMT351R7EFR8C-RD 4GB
Kingston KHX31600C10F/8G 8GB

Corsair CMD32GX4M4A2666C15 8GB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMD32GX4M4A2666C15 8GB
Corsair CMD32GX4M4A2666C15 8GB
内存RAM
Kingston 99U5471-054.A00LF 8GB
Kingston 99U5471-054.A00LF 8GB
Kingston 99U5458-001.A00LF 2GB
Kingston 99U5458-001.A00LF 2GB
内存RAM
Samsung M471A2K43BB1-CRC 16GB
Samsung M471A2K43BB1-CRC 16GB
AMD R7416G2400U2S 16GB
AMD R7416G2400U2S 16GB
内存RAM
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMT351U6CFR8C-H9 4GB
SK Hynix HMA82GS6DJR8N-VK 16GB
SK Hynix HMA82GS6DJR8N-VK 16GB
内存RAM
Samsung M471A1G44AB0-CWE 8GB
Samsung M471A1G44AB0-CWE 8GB
Samsung M471A1G44BB0-CWE 8GB
Samsung M471A1G44BB0-CWE 8GB
内存RAM
Samsung M386B4G70DM0-CMA4 32GB
Samsung M386B4G70DM0-CMA4 32GB
SK Hynix GKE800UD102408-2133 8GB
SK Hynix GKE800UD102408-2133 8GB
内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
Crucial Technology BLS8G4D240FSCK.8FD 8GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Crucial Technology CT32G4DFD8266.C16FE 32GB
Crucial Technology CT32G4DFD8266.C16FE 32GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
G Skill Intl F4-3000C15-8GVGB 8GB
G Skill Intl F4-3000C15-8GVGB 8GB
内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
Kingston XN205T-HYD2 16GB
Kingston XN205T-HYD2 16GB
内存RAM
Kingston 99U5474-038.A00LF 4GB
Kingston 99U5474-038.A00LF 4GB
Wilk Elektronik S.A. IRXS2666D464L16/16G 16GB
Wilk Elektronik S.A. IRXS2666D464L16/16G 16GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology BL8G26C16U4B.8FD 8GB
Crucial Technology BL8G26C16U4B.8FD 8GB
内存RAM
Kingston 9965525-144.A00LF 8GB
Kingston 9965525-144.A00LF 8GB
Crucial Technology CT8G4DFRA266.C8FE 8GB
Crucial Technology CT8G4DFRA266.C8FE 8GB
内存RAM
Samsung M3 78T2863QZS-CF7 1GB
Samsung M3 78T2863QZS-CF7 1GB
G Skill Intl F4-2400C16-8GRSB 8GB
G Skill Intl F4-2400C16-8GRSB 8GB
内存RAM