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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMG32GX4M2E3200C16 16GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Corsair CMG32GX4M2E3200C16 16GB

总分
star star star star star
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分
star star star star star
Corsair CMG32GX4M2E3200C16 16GB

Corsair CMG32GX4M2E3200C16 16GB

差异 规格 评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB 需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
报告一个错误
Corsair CMG32GX4M2E3200C16 16GB 需要考虑的原因
Corsair CMG32GX4M2E3200C16 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    29 left arrow 35
    左右 -21% 更低的延时
  • 更快的读取速度，GB/s
    17.6 left arrow 13.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.2 left arrow 9.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMG32GX4M2E3200C16 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 29
  • 读取速度，GB/s
    13.7 left arrow 17.6
  • 写入速度，GB/s
    9.6 left arrow 13.2
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2312 left arrow 3412

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB RAM的比较

SK Hynix HMT351R7EFR8C-RD 4GB
Kingston KHX31600C10F/8G 8GB

Corsair CMG32GX4M2E3200C16 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Corsair CMG32GX4M2E3200C16 16GB
Corsair CMG32GX4M2E3200C16 16GB
内存RAM
Samsung 1600 CL10 Series 8GB
Samsung 1600 CL10 Series 8GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
Gold Key Technology Co Ltd NMUD416E82-4600C 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK32GX4M2K3600C16 16GB
Corsair CMK32GX4M2K3600C16 16GB
内存RAM
Kingston 99U5403-468.A00LF 8GB
Kingston 99U5403-468.A00LF 8GB
Hewlett-Packard 7EH67AA# 8GB
Hewlett-Packard 7EH67AA# 8GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
Avant Technology J644GU44J9266NQ 32GB
Avant Technology J644GU44J9266NQ 32GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
Micron Technology 36ASF2G72PZ-2G4AT 16GB
Micron Technology 36ASF2G72PZ-2G4AT 16GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB5285282666 8GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB528528266
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Mushkin MR[ABC]4U360JNNM8G 8GB
Mushkin MR[ABC]4U360JNNM8G 8GB
内存RAM
Samsung M378T5663QZ3-CF7 2GB
Samsung M378T5663QZ3-CF7 2GB
Crucial Technology CT4G4DFS8213.M8FB 4GB
Crucial Technology CT4G4DFS8213.M8FB 4GB
内存RAM
Kingston 9905474-012.A00LF 2GB
Kingston 9905474-012.A00LF 2GB
Kingston HX316C10F/4 4GB
Kingston HX316C10F/4 4GB
内存RAM
Kingston KP223C-ELD 2GB
Kingston KP223C-ELD 2GB
G Skill Intl F4-3333C16-8GTZSK 8GB
G Skill Intl F4-3333C16-8GTZSK 8GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 36ASF4G72PZ-2G1B1 32GB
Micron Technology 36ASF4G72PZ-2G1B1 32GB
内存RAM
G Skill Intl F5-6000J3636F16G 16GB
G Skill Intl F5-6000J3636F16G 16GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
Shanghai Kuxin Microelectronics Ltd NMUD480E82-3200 8GB
内存RAM
Elpida EBJ21UE8BDF0-DJ-F 2GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Corsair CMU16GX4M2C3200C16 8GB
Corsair CMU16GX4M2C3200C16 8GB
内存RAM