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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
比较
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
总分
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
总分
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
差异
规格
评论
差异
需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
报告一个错误
低于PassMark测试中的延时,ns
35
72
左右 51% 更低的延时
更快的写入速度,GB/s
9.6
8.0
测试中的平均数值
需要考虑的原因
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
报告一个错误
更快的读取速度,GB/s
15.3
13.7
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
35
72
读取速度,GB/s
13.7
15.3
写入速度,GB/s
9.6
8.0
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2312
1593
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB RAM的比较
SK Hynix HMT351R7EFR8C-RD 4GB
Kingston KHX31600C10F/8G 8GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB RAM的比较
Apacer Technology AQD-D4U8GN24-SE 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Avant Technology J641GU42J7240N3 8GB
Crucial Technology CT102464BA160B.M16 8GB
Kingston 9905713-035.A00G 8GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Corsair CMWX8GD3000C16W4D 8GB
Kingston HP698651-154-MCN 8GB
G Skill Intl F4-4266C17-16GTRGB 16GB
Kingston 9965525-155.A00LF 8GB
SK Hynix HMA82GS6CJR8N-XN 16GB
Samsung M393B1K70CH0-CH9 8GB
Kingston 9965589-008.D01G 8GB
Samsung M378A1G43DB0-CPB 8GB
UMAX Technology D4-2133-4GB-512X8-L 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Shenzhen Xingmem Technology Corp 8ATF51264AZ-2G1A1 4GB
Samsung M393B2G70BH0-CK0 16GB
Kingston KHX2666C13D4/8GX 8GB
SK Hynix HMT325S6BFR8C-H9 2GB
Kllisre 8GB
Kingston KHX318C10FR/8G 8GB
G Skill Intl F4-3733C17-4GTZ 4GB
Samsung M471B5773DH0-CK0 2GB
G Skill Intl F4-2800C18-16GRS 16GB
PUSKILL PJ16TFK1GM8 16GB
Samsung M471A2K43DB1-CWE 16GB
Samsung DDR3 8GB 1600MHz 8GB
G Skill Intl F4-2400C17-4GFX 4GB
报告一个错误
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Bug description
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