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Patriot Memory (PDP Systems) 2400 C15 Series 4GB
AMD R744G2606U1S 4GB

Patriot Memory (PDP Systems) 2400 C15 Series 4GB vs AMD R744G2606U1S 4GB

总分
star star star star star
Patriot Memory (PDP Systems) 2400 C15 Series 4GB

Patriot Memory (PDP Systems) 2400 C15 Series 4GB

总分
star star star star star
AMD R744G2606U1S 4GB

AMD R744G2606U1S 4GB

差异 规格 评论

差异

Patriot Memory (PDP Systems) 2400 C15 Series 4GB 需要考虑的原因
Patriot Memory (PDP Systems) 2400 C15 Series 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 76
    左右 58% 更低的延时
  • 更快的写入速度，GB/s
    11.3 left arrow 8.7
    测试中的平均数值
AMD R744G2606U1S 4GB 需要考虑的原因
AMD R744G2606U1S 4GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 17000
    左右 1.13 更高的带宽

规格

完整的技术规格清单
Patriot Memory (PDP Systems) 2400 C15 Series 4GB
AMD R744G2606U1S 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    32 left arrow 76
  • 读取速度，GB/s
    15.7 left arrow 15.7
  • 写入速度，GB/s
    11.3 left arrow 8.7
  • 内存带宽，mbps
    17000 left arrow 19200
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2854 left arrow 1809

Patriot Memory (PDP Systems) 2400 C15 Series 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
SK Hynix HMA851S6CJR6N-XN 4GB

AMD R744G2606U1S 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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