RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Patriot Memory (PDP Systems) PSD22G8002 2GB
Panram International Corporation W4U3200PS-16G 16GB
比较
Patriot Memory (PDP Systems) PSD22G8002 2GB vs Panram International Corporation W4U3200PS-16G 16GB
总分
Patriot Memory (PDP Systems) PSD22G8002 2GB
总分
Panram International Corporation W4U3200PS-16G 16GB
差异
规格
评论
差异
需要考虑的原因
Patriot Memory (PDP Systems) PSD22G8002 2GB
报告一个错误
更快的读取速度,GB/s
4
18.6
测试中的平均数值
更快的写入速度,GB/s
2,109.3
15.8
测试中的平均数值
需要考虑的原因
Panram International Corporation W4U3200PS-16G 16GB
报告一个错误
低于PassMark测试中的延时,ns
32
60
左右 -88% 更低的延时
更高的内存带宽,mbps
25600
6400
左右 4 更高的带宽
规格
完整的技术规格清单
Patriot Memory (PDP Systems) PSD22G8002 2GB
Panram International Corporation W4U3200PS-16G 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
60
32
读取速度,GB/s
4,162.7
18.6
写入速度,GB/s
2,109.3
15.8
内存带宽,mbps
6400
25600
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 26 28
时序/时钟速度
5-5-5-15 / 800 MHz
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)
784
3851
Patriot Memory (PDP Systems) PSD22G8002 2GB RAM的比较
Apacer Technology 75.A73AA.G03 2GB
Patriot Memory (PDP Systems) PSD22G80026 2GB
Panram International Corporation W4U3200PS-16G 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B2G70BH0-CK0 16GB
Corsair CMT32GX4M2C3466C16 16GB
Kingston KVR800D2N6/2G 2GB
Chun Well Technology Holding Limited D4U0832160B 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3000C16 16GB
Samsung M471B5673FH0-CF8 2GB
Essencore Limited KD4AGU880-34A170X 16GB
Kingston KHX1600C9D3/4G 4GB
Kingston 9905713-035.A00G 8GB
Samsung M471B5673FH0-CF8 2GB
Crucial Technology BLE8G4D30AEEA.K16FE 8GB
Samsung M386B4G70DM0-CMA4 32GB
A-DATA Technology DDR4 3333 2OZ 4GB
Kingston KP223C-ELD 2GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N
SK Hynix HMA82GS6CJR8N-VK 16GB
Corsair CMT128GX4M8C3000C15 16GB
Samsung M3 78T2863EHS-CF7 1GB
SK Hynix GKE160SO102408-3000 16GB
Kingston 9905403-011.A03LF 2GB
Tanbassh 8G 2666MHZ 8GB
G Skill Intl F3-10600CL9-2GBNT 2GB
Jinyu 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Patriot Memory (PDP Systems) 4000 C16 Series 8GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
G Skill Intl F4-3200C16-8GTZB 8GB
报告一个错误
×
Bug description
Source link