Patriot Memory (PDP Systems) PSD34G16002 4GB vs Corsair CM4X8GD3200C16K4 8GB

总分

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

总分

Corsair CM4X8GD3200C16K4 8GB

Corsair CM4X8GD3200C16K4 8GB

差异规格评论

差异

Patriot Memory (PDP Systems) PSD34G16002 4GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD34G16002 4GB

报告一个错误

Corsair CM4X8GD3200C16K4 8GB

需要考虑的原因
Corsair CM4X8GD3200C16K4 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 39

左右 -39% 更低的延时
更快的读取速度，GB/s

18.3 14.7

测试中的平均数值
更快的写入速度，GB/s

14.4 9.2

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) PSD34G16002 4GB

Corsair CM4X8GD3200C16K4 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 28
读取速度，GB/s

14.7 18.3
写入速度，GB/s

9.2 14.4
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2322 3482

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M3 78T3354BZ0-CCC 256MB

Crucial Technology BLS8G4S240FSD.16FBD2 8GB

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Samsung M3 78T2953EZ3-CF7 1GB

Samsung M3 78T2953EZ3-CF7 1GB

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Hewlett-Packard 7TE39AA#ABC 8GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Kingston KN2M64-ETB 8GB

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Crucial Technology CT8G4SFD824A.C16FDD2 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Team Group Inc. TEAMGROUP-D4-3866 4GB

Team Group Inc. TEAMGROUP-D4-3866 4GB

Samsung M393B1K70QB0-CK0 8GB

Samsung M393B1K70QB0-CK0 8GB

Corsair CMK32GX4M4C3000C16 8GB

Corsair CMK32GX4M4C3000C16 8GB

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Kingston 9965525-018.A00LF 4GB

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Apacer Technology 78.C1GM3.C7Z0B 8GB

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Kingston 9905403-437.A01LF 4GB

Apacer Technology GD2.11173T.001 4GB

Apacer Technology GD2.11173T.001 4GB