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Patriot Memory (PDP Systems) PSD34G16002 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB

Patriot Memory (PDP Systems) PSD34G16002 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB

总分
star star star star star
Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB

差异 规格 评论

差异

Patriot Memory (PDP Systems) PSD34G16002 4GB 需要考虑的原因
Patriot Memory (PDP Systems) PSD34G16002 4GB
报告一个错误
  • 更快的读取速度，GB/s
    14.7 left arrow 14.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.2 left arrow 9.0
    测试中的平均数值
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB 需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 39
    左右 -30% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Patriot Memory (PDP Systems) PSD34G16002 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 30
  • 读取速度，GB/s
    14.7 left arrow 14.5
  • 写入速度，GB/s
    9.2 left arrow 9.0
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2322 left arrow 2374

Patriot Memory (PDP Systems) PSD34G16002 4GB RAM的比较

Transcend Information JM1600KLN-4GK 2GB
Micron Technology ITC 4GB

Hynix Semiconductor (Hyundai Electronics) HMA82GS6CJR8N-VK 16GB RAM的比较

Kingston KVR16N11/8-SP 8GB
Samsung M471B5773DH0-CK0 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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