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Peak Electronics 256X64M-67E 2GB
G Skill Intl F4-2800C14-16GTZ 16GB

Peak Electronics 256X64M-67E 2GB vs G Skill Intl F4-2800C14-16GTZ 16GB

总分
star star star star star
Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

总分
star star star star star
G Skill Intl F4-2800C14-16GTZ 16GB

G Skill Intl F4-2800C14-16GTZ 16GB

差异 规格 评论

差异

Peak Electronics 256X64M-67E 2GB 需要考虑的原因
Peak Electronics 256X64M-67E 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 13.8
    测试中的平均数值
G Skill Intl F4-2800C14-16GTZ 16GB 需要考虑的原因
G Skill Intl F4-2800C14-16GTZ 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    38 left arrow 39
    左右 -3% 更低的延时
  • 更快的写入速度，GB/s
    10.2 left arrow 1,597.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Peak Electronics 256X64M-67E 2GB
G Skill Intl F4-2800C14-16GTZ 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 38
  • 读取速度，GB/s
    5,022.9 left arrow 13.8
  • 写入速度，GB/s
    1,597.0 left arrow 10.2
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    753 left arrow 2841

Peak Electronics 256X64M-67E 2GB RAM的比较

A Force Manufacturing Ltd. 256X64M-67E 2GB
Kingston ACR26D4U9S8MH-8 8GB

G Skill Intl F4-2800C14-16GTZ 16GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Kingston 9905403-090.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
G Skill Intl F4-2800C14-16GTZ 16GB
G Skill Intl F4-2800C14-16GTZ 16GB
内存RAM
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
Kingston 9905783-025.A01G 16GB
Kingston 9905783-025.A01G 16GB
内存RAM
AMD R538G1601U2S-UO 8GB
AMD R538G1601U2S-UO 8GB
G Skill Intl F4-3200C16-16GTZKO 16GB
G Skill Intl F4-3200C16-16GTZKO 16GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
G Skill Intl F4-3200C15-8GVR 8GB
G Skill Intl F4-3200C15-8GVR 8GB
内存RAM
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F4-3000C14-16GVR 16GB
G Skill Intl F4-3000C14-16GVR 16GB
内存RAM
Corsair CMX8GX3M2A1600C11 4GB
Corsair CMX8GX3M2A1600C11 4GB
Corsair CMU64GX4M4C3200C16 16GB
Corsair CMU64GX4M4C3200C16 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
Micron Technology 16ATF2G64AZ-2G3B1 16GB
内存RAM
Kingston 99U5474-037.A00LF 4GB
Kingston 99U5474-037.A00LF 4GB
Corsair CMU16GX4M2D3000C16 8GB
Corsair CMU16GX4M2D3000C16 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Corsair CMSO32GX4M2A2133C15 16GB
Corsair CMSO32GX4M2A2133C15 16GB
内存RAM
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Corsair CMK16GX4M2K4266C16 8GB
Corsair CMK16GX4M2K4266C16 8GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
A-DATA Technology AO1P24HCST2-BSCS 16GB
A-DATA Technology AO1P24HCST2-BSCS 16GB
内存RAM
Kingston 9965525-155.A00LF 8GB
Kingston 9965525-155.A00LF 8GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB
Micron Technology 36ASF4G72PZ-2G1A1 32GB
内存RAM
takeMS International AG TMS2GB264D083805EV 2GB
takeMS International AG TMS2GB264D083805EV 2GB
Samsung M393A1G40EB1-CPB 8GB
Samsung M393A1G40EB1-CPB 8GB
内存RAM
Essencore Limited KD48GU88C-26N1600 8GB
Essencore Limited KD48GU88C-26N1600 8GB
Corsair CMW32GX4M4A2666C16 8GB
Corsair CMW32GX4M4A2666C16 8GB
内存RAM