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Peak Electronics 256X64M-67E 2GB
Gloway International Co. Ltd. TYA4U2400D17081C 8GB

Peak Electronics 256X64M-67E 2GB vs Gloway International Co. Ltd. TYA4U2400D17081C 8GB

总分
star star star star star
Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

总分
star star star star star
Gloway International Co. Ltd. TYA4U2400D17081C 8GB

Gloway International Co. Ltd. TYA4U2400D17081C 8GB

差异 规格 评论

差异

Peak Electronics 256X64M-67E 2GB 需要考虑的原因
Peak Electronics 256X64M-67E 2GB
报告一个错误
  • 更快的读取速度，GB/s
    5 left arrow 17.1
    测试中的平均数值
Gloway International Co. Ltd. TYA4U2400D17081C 8GB 需要考虑的原因
Gloway International Co. Ltd. TYA4U2400D17081C 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 39
    左右 -63% 更低的延时
  • 更快的写入速度，GB/s
    12.8 left arrow 1,597.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Peak Electronics 256X64M-67E 2GB
Gloway International Co. Ltd. TYA4U2400D17081C 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 24
  • 读取速度，GB/s
    5,022.9 left arrow 17.1
  • 写入速度，GB/s
    1,597.0 left arrow 12.8
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    753 left arrow 3257

Peak Electronics 256X64M-67E 2GB RAM的比较

A Force Manufacturing Ltd. 256X64M-67E 2GB
Kingston ACR26D4U9S8MH-8 8GB

Gloway International Co. Ltd. TYA4U2400D17081C 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M393B1K70QB0-CK0 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Gloway International Co. Ltd. TYA4U2400D17081C 8GB
Gloway International Co. Ltd. TYA4U2400D17081C 8GB
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Samsung M391B5673EH1-CH9 2GB
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Micron Technology M471A1K43BB1-CRC 8GB
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Kingston 9965516-112.A00LF 16GB
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Crucial Technology CT4G4DFS8266.C8FB 4GB
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Kingston KHX3200C18D4/8G 8GB
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Hynix Semiconductor (Hyundai Electronics) GKE160UD10240
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Nanya Technology NT512T64U88B0BY-3C 512MB
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Crucial Technology CT16G4DFRA32A.M16FR 16GB
内存RAM
Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
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