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Peak Electronics 256X64M-67E 2GB
Samsung M393A1G43EB1-CRC 8GB

Peak Electronics 256X64M-67E 2GB vs Samsung M393A1G43EB1-CRC 8GB

总分
star star star star star
Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

总分
star star star star star
Samsung M393A1G43EB1-CRC 8GB

Samsung M393A1G43EB1-CRC 8GB

差异 规格 评论

差异

Peak Electronics 256X64M-67E 2GB 需要考虑的原因
Peak Electronics 256X64M-67E 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    39 left arrow 49
    左右 20% 更低的延时
  • 更快的读取速度，GB/s
    5 left arrow 10.9
    测试中的平均数值
Samsung M393A1G43EB1-CRC 8GB 需要考虑的原因
Samsung M393A1G43EB1-CRC 8GB
报告一个错误
  • 更快的写入速度，GB/s
    8.3 left arrow 1,597.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Peak Electronics 256X64M-67E 2GB
Samsung M393A1G43EB1-CRC 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 49
  • 读取速度，GB/s
    5,022.9 left arrow 10.9
  • 写入速度，GB/s
    1,597.0 left arrow 8.3
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    753 left arrow 2413

Peak Electronics 256X64M-67E 2GB RAM的比较

A Force Manufacturing Ltd. 256X64M-67E 2GB
Kingston ACR26D4U9S8MH-8 8GB

Samsung M393A1G43EB1-CRC 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Peak Electronics 256X64M-67E 2GB
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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内存RAM
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Kingston 9965525-140.A00LF 8GB
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内存RAM