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Peak Electronics 256X64M-67E 2GB
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB

Peak Electronics 256X64M-67E 2GB vs Wilk Elektronik S.A. GY2666D464L16S/8G 8GB

总分
star star star star star
Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

总分
star star star star star
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB

Wilk Elektronik S.A. GY2666D464L16S/8G 8GB

差异 规格 评论

差异

Peak Electronics 256X64M-67E 2GB 需要考虑的原因
Peak Electronics 256X64M-67E 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    39 left arrow 83
    左右 53% 更低的延时
  • 更快的读取速度，GB/s
    5 left arrow 14.3
    测试中的平均数值
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB 需要考虑的原因
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB
报告一个错误
  • 更快的写入速度，GB/s
    8.1 left arrow 1,597.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Peak Electronics 256X64M-67E 2GB
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 83
  • 读取速度，GB/s
    5,022.9 left arrow 14.3
  • 写入速度，GB/s
    1,597.0 left arrow 8.1
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    753 left arrow 1774

Peak Electronics 256X64M-67E 2GB RAM的比较

A Force Manufacturing Ltd. 256X64M-67E 2GB
Kingston ACR26D4U9S8MH-8 8GB

Wilk Elektronik S.A. GY2666D464L16S/8G 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Peak Electronics 256X64M-67E 2GB
Peak Electronics 256X64M-67E 2GB
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB
Wilk Elektronik S.A. GY2666D464L16S/8G 8GB
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Samsung M471B5273CH0-CH9 4GB
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Kingston 9905700-072.A01G 16GB
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A-DATA Technology DOVF1B163G2G 2GB
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Kingston KCRXJ6-HYJ 16GB
Kingston KCRXJ6-HYJ 16GB
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Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
Gloway International Co. Ltd. WAR4U2666D19161C-S 16GB
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SK Hynix HMT325U6CFR8C-PB 2GB
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Crucial Technology BLS8G3N18AES4.16FE 8GB
Crucial Technology BLS8G3N18AES4.16FE 8GB
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Transcend Information TS1GLH64V1H 8GB
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Samsung M393B2G70BH0-CK0 16GB
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Samsung M378T5663QZ3-CF7 2GB
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Essencore Limited IM48GU88N26-GIIHA 8GB
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Ramaxel Technology RMR5030ME68F9F1600 4GB
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Golden Empire CL16-18-18 D4-3400 4GB
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Corsair CMV4GX3M1B1600C11 4GB
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Micron Technology 16ATF2G64AZ-2G1A1 16GB
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Patriot Memory (PDP Systems) PSD22G8002 2GB
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Avant Technology W642GU42J5213N8 16GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Corsair CMH16GX4M2Z3600C18 8GB
Corsair CMH16GX4M2Z3600C18 8GB
内存RAM
Kingston KP4T2F-PSB 4GB
Kingston KP4T2F-PSB 4GB
Crucial Technology CT16G4SFD824A.M16FJ 16GB
Crucial Technology CT16G4SFD824A.M16FJ 16GB
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