PNY Electronics 4GBH2X02E99927-16 4GB vs A-DATA Technology AO1P24HC4R1-BSIS 4GB

总分

PNY Electronics 4GBH2X02E99927-16 4GB

PNY Electronics 4GBH2X02E99927-16 4GB

总分

A-DATA Technology AO1P24HC4R1-BSIS 4GB

A-DATA Technology AO1P24HC4R1-BSIS 4GB

差异规格评论

差异

PNY Electronics 4GBH2X02E99927-16 4GB

需要考虑的原因
PNY Electronics 4GBH2X02E99927-16 4GB

报告一个错误

A-DATA Technology AO1P24HC4R1-BSIS 4GB

需要考虑的原因
A-DATA Technology AO1P24HC4R1-BSIS 4GB

报告一个错误

低于PassMark测试中的延时，ns

36 63

左右 -75% 更低的延时
更快的读取速度，GB/s

14.9 6.1

测试中的平均数值
更快的写入速度，GB/s

8.2 5.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

PNY Electronics 4GBH2X02E99927-16 4GB

A-DATA Technology AO1P24HC4R1-BSIS 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

63 36
读取速度，GB/s

6.1 14.9
写入速度，GB/s

5.0 8.2
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1274 2281

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

PNY Electronics 4GBH2X02E99927-16 4GB

PNY Electronics 4GBH2X02E99927-16 4GB

A-DATA Technology AO1P24HC4R1-BSIS 4GB

A-DATA Technology AO1P24HC4R1-BSIS 4GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Apacer Technology 78.DAGQ7.40B0B 16GB

Apacer Technology 78.DAGQ7.40B0B 16GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

G Skill Intl F4-3200C16-4GTZB 4GB

G Skill Intl F4-3200C16-4GTZB 4GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

G Skill Intl F4-3400C16-16GVK 16GB

G Skill Intl F4-3400C16-16GVK 16GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB

Chun Well Technology Holding Limited CL18-20-20 D4-3600

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

Crucial Technology CT16G4SFD824A.C16FBR 16GB

Crucial Technology CT16G4SFD824A.C16FBR 16GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

G Skill Intl F4-2400C15-8GFXR 8GB

G Skill Intl F4-2400C15-8GFXR 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Crucial Technology CT16G4SFRA32A.M16FRS 16GB

Crucial Technology CT16G4SFRA32A.M16FRS 16GB

Essencore Limited KD48GU88C-26N1600 8GB

Essencore Limited KD48GU88C-26N1600 8GB

Corsair CMK16GX4M4B3200C15 4GB

Corsair CMK16GX4M4B3200C15 4GB

Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

Ramaxel Technology RMSA3310ME96HAF-3200 8GB

Ramaxel Technology RMSA3310ME96HAF-3200 8GB

Elpida EBE21UE8ACUA-8G-E 2GB

Elpida EBE21UE8ACUA-8G-E 2GB

Shenzhen Xingmem Technology Corp 16GB

Shenzhen Xingmem Technology Corp 16GB

Samsung M378B5773CH0-CH9 2GB

Samsung M378B5773CH0-CH9 2GB

V-Color Technology Inc. TL48G36S8KBNRGB18 8GB

V-Color Technology Inc. TL48G36S8KBNRGB18 8GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

Corsair CM4X8GE3000C15K4 8GB

Corsair CM4X8GE3000C15K4 8GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Kingston 9905713-035.A00G 8GB

Kingston 9905713-035.A00G 8GB