RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
PNY Electronics 64C0MHHHJ-HS 4GB
G Skill Intl F4-2400C17-8GFT 8GB

PNY Electronics 64C0MHHHJ-HS 4GB vs G Skill Intl F4-2400C17-8GFT 8GB

总分
star star star star star
PNY Electronics 64C0MHHHJ-HS 4GB

PNY Electronics 64C0MHHHJ-HS 4GB

总分
star star star star star
G Skill Intl F4-2400C17-8GFT 8GB

G Skill Intl F4-2400C17-8GFT 8GB

差异 规格 评论

差异

PNY Electronics 64C0MHHHJ-HS 4GB 需要考虑的原因
PNY Electronics 64C0MHHHJ-HS 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 73
    左右 64% 更低的延时
  • 更快的写入速度，GB/s
    8.3 left arrow 7.5
    测试中的平均数值
G Skill Intl F4-2400C17-8GFT 8GB 需要考虑的原因
G Skill Intl F4-2400C17-8GFT 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15 left arrow 13.7
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
PNY Electronics 64C0MHHHJ-HS 4GB
G Skill Intl F4-2400C17-8GFT 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 73
  • 读取速度，GB/s
    13.7 left arrow 15.0
  • 写入速度，GB/s
    8.3 left arrow 7.5
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-19200, 1.2V, CAS Supported: 9 11 13 15 17
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2270 left arrow 1838

PNY Electronics 64C0MHHHJ-HS 4GB RAM的比较

A-DATA Technology EL63I1C1624ZV 4GB
G Skill Intl F4-3200C16-8GTRS 8GB

G Skill Intl F4-2400C17-8GFT 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

PNY Electronics 64C0MHHHJ-HS 4GB
PNY Electronics 64C0MHHHJ-HS 4GB
G Skill Intl F4-2400C17-8GFT 8GB
G Skill Intl F4-2400C17-8GFT 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Micron Technology 8ATF1G64AZ-2G3B1 8GB
Micron Technology 8ATF1G64AZ-2G3B1 8GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Kingston 9905744-005.A00G 16GB
Kingston 9905744-005.A00G 16GB
内存RAM
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Corsair CMK8GX4M2B4266C19 4GB
Corsair CMK8GX4M2B4266C19 4GB
内存RAM
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMT325U6CFR8C-PB 2GB
SK Hynix HMAA2GS6CJR8N-XN 16GB
SK Hynix HMAA2GS6CJR8N-XN 16GB
内存RAM
Crucial Technology CT25664AA800.M16FM 2GB
Crucial Technology CT25664AA800.M16FM 2GB
SK Hynix HMA81GS6CJRJR-VK 8GB
SK Hynix HMA81GS6CJRJR-VK 8GB
内存RAM
Apacer Technology 78.01GA0.9K5 1GB
Apacer Technology 78.01GA0.9K5 1GB
SK Hynix HMA81GU7AFR8N-UH 8GB
SK Hynix HMA81GU7AFR8N-UH 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200
内存RAM
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
Avant Technology J642GU42J9266N4 16GB
Avant Technology J642GU42J9266N4 16GB
内存RAM
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HYMP112U64CP8-S6 1GB
SK Hynix HMA42GR7AFR4N-UH 16GB
SK Hynix HMA42GR7AFR4N-UH 16GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Asgard VMA45UH-MEC1U2AW2 16GB
Asgard VMA45UH-MEC1U2AW2 16GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Crucial Technology CT16G4DFD824A.M16FJ 16GB
Crucial Technology CT16G4DFD824A.M16FJ 16GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Micron Technology 16ATF2G64AZ-2G6H1 16GB
Micron Technology 16ATF2G64AZ-2G6H1 16GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
A-DATA Technology DDR4 2666 2OZ 4GB
A-DATA Technology DDR4 2666 2OZ 4GB
内存RAM