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PNY Electronics 64C0MHHHJ-HS 4GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB

PNY Electronics 64C0MHHHJ-HS 4GB vs Micron Technology 8ATF2G64HZ-3G2E2 16GB

总分
star star star star star
PNY Electronics 64C0MHHHJ-HS 4GB

PNY Electronics 64C0MHHHJ-HS 4GB

总分
star star star star star
Micron Technology 8ATF2G64HZ-3G2E2 16GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB

差异 规格 评论

差异

PNY Electronics 64C0MHHHJ-HS 4GB 需要考虑的原因
PNY Electronics 64C0MHHHJ-HS 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 51
    左右 49% 更低的延时
Micron Technology 8ATF2G64HZ-3G2E2 16GB 需要考虑的原因
Micron Technology 8ATF2G64HZ-3G2E2 16GB
报告一个错误
  • 更快的读取速度，GB/s
    15.6 left arrow 13.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.8 left arrow 8.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    25600 left arrow 10600
    左右 2.42 更高的带宽

规格

完整的技术规格清单
PNY Electronics 64C0MHHHJ-HS 4GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 51
  • 读取速度，GB/s
    13.7 left arrow 15.6
  • 写入速度，GB/s
    8.3 left arrow 11.8
  • 内存带宽，mbps
    10600 left arrow 25600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
  • 排名PassMark (越多越好)
    2270 left arrow 2687

PNY Electronics 64C0MHHHJ-HS 4GB RAM的比较

A-DATA Technology EL63I1C1624ZV 4GB
G Skill Intl F4-3200C16-8GTRS 8GB

Micron Technology 8ATF2G64HZ-3G2E2 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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Micron Technology 36ASF2G72PZ-2G1A2 16GB
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内存RAM
PNY Electronics 64C0MHHHJ-HS 4GB
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内存RAM
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内存RAM
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内存RAM
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