PNY Electronics 64C0MHHHJ-HS 4GB vs SK Hynix GKE800UD102408-2400 8GB

总分

PNY Electronics 64C0MHHHJ-HS 4GB

PNY Electronics 64C0MHHHJ-HS 4GB

总分

SK Hynix GKE800UD102408-2400 8GB

SK Hynix GKE800UD102408-2400 8GB

差异规格评论

差异

PNY Electronics 64C0MHHHJ-HS 4GB

需要考虑的原因
PNY Electronics 64C0MHHHJ-HS 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 36

左右 28% 更低的延时

SK Hynix GKE800UD102408-2400 8GB

需要考虑的原因
SK Hynix GKE800UD102408-2400 8GB

报告一个错误

更快的读取速度，GB/s

14.4 13.7

测试中的平均数值
更快的写入速度，GB/s

10.4 8.3

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

PNY Electronics 64C0MHHHJ-HS 4GB

SK Hynix GKE800UD102408-2400 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

26 36
读取速度，GB/s

13.7 14.4
写入速度，GB/s

8.3 10.4
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2270 2489

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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AMD R538G1601U2S-UO 8GB

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Kingston KF560C40-16 16GB

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Samsung M471A1K43EB1-CWE 8GB

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Crucial Technology CT16G4SFRA32A.M16FR 16GB

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PNY Electronics 64C0MHHHJ-HS 4GB

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SK Hynix GKE800UD102408-2400 8GB

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Nanya Technology NT4GC72B4NA1NL-CG 4GB

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Samsung M471B5273CH0-CH9 4GB

Ramaxel Technology RMUA5210ME88HCF-3200 32GB

Ramaxel Technology RMUA5210ME88HCF-3200 32GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Corsair CMW32GX4M2E3200C16 16GB

Corsair CMW32GX4M2E3200C16 16GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

AMD R744G2606U1S 4GB

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