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Neo Forza GKE160SO204808-3200 16GB
Kingston KF560C40-16 16GB

Neo Forza GKE160SO204808-3200 16GB vs Kingston KF560C40-16 16GB

总分
star star star star star
Neo Forza GKE160SO204808-3200 16GB

Neo Forza GKE160SO204808-3200 16GB

总分
star star star star star
Kingston KF560C40-16 16GB

Kingston KF560C40-16 16GB

差异 规格 评论

差异

Neo Forza GKE160SO204808-3200 16GB 需要考虑的原因
Neo Forza GKE160SO204808-3200 16GB
报告一个错误
  • 更高的内存带宽，mbps
    25600 left arrow 19200
    左右 1.33% 更高的带宽
Kingston KF560C40-16 16GB 需要考虑的原因
Kingston KF560C40-16 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 63
    左右 -163% 更低的延时
  • 更快的读取速度，GB/s
    14.8 left arrow 14.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.0 left arrow 12.7
    测试中的平均数值

规格

完整的技术规格清单
Neo Forza GKE160SO204808-3200 16GB
Kingston KF560C40-16 16GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR5
  • PassMark中的延时，ns
    63 left arrow 24
  • 读取速度，GB/s
    14.7 left arrow 14.8
  • 写入速度，GB/s
    12.7 left arrow 13.0
  • 内存带宽，mbps
    25600 left arrow 19200
Other
  • 描述
    PC4-25600, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18 19 20 21 22 left arrow PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42
  • 时序/时钟速度
    20-20-20, 22-22-22, 24-24-24 / 3200 MHz left arrow no data / 2400 MHz
  • 排名PassMark (越多越好)
    2543 left arrow 3524

Neo Forza GKE160SO204808-3200 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Kingston KF560C40-16 16GB RAM的比较

Kingston KF548C38-16 16GB
Kingston KF552C40-16 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Neo Forza GKE160SO204808-3200 16GB
Neo Forza GKE160SO204808-3200 16GB
Kingston KF560C40-16 16GB
Kingston KF560C40-16 16GB
内存RAM
Samsung DDR3 8GB 1600MHz 8GB
Samsung DDR3 8GB 1600MHz 8GB
Avant Technology W641GU42J7240NC 8GB
Avant Technology W641GU42J7240NC 8GB
内存RAM
Team Group Inc. Vulcan-1600 4GB
Team Group Inc. Vulcan-1600 4GB
G Skill Intl F4-3866C18-16GTZR 16GB
G Skill Intl F4-3866C18-16GTZR 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
InnoDisk Corporation M4C0-AGS1TCIK 16GB
InnoDisk Corporation M4C0-AGS1TCIK 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston KHX2400C15S4/8G 8GB
Kingston KHX2400C15S4/8G 8GB
内存RAM
SK Hynix HYMP512S64CP8-Y5 1GB
SK Hynix HYMP512S64CP8-Y5 1GB
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
Crucial Technology BLS8G4D26BFSCK.8FBD 8GB
内存RAM
Ramos Technology RMB4GB58BCA3-13HC 4GB
Ramos Technology RMB4GB58BCA3-13HC 4GB
Samsung M471A1K43CB1-CTD 8GB
Samsung M471A1K43CB1-CTD 8GB
内存RAM
Samsung M393A1G40DB0-CPB 8GB
Samsung M393A1G40DB0-CPB 8GB
Crucial Technology CT8G4DFRA32A.M8FR 8GB
Crucial Technology CT8G4DFRA32A.M8FR 8GB
内存RAM
Samsung M393B1G70QH0-YK0 8GB
Samsung M393B1G70QH0-YK0 8GB
Wilk Elektronik S.A. IRX3200D464L16/16G 16GB
Wilk Elektronik S.A. IRX3200D464L16/16G 16GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
G Skill Intl F4-2666C15-16GVR 16GB
G Skill Intl F4-2666C15-16GVR 16GB
内存RAM
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Micron Technology 8ATF2G64HZ-3G2E2 16GB
Corsair CMK64GX4M8X4200C19 8GB
Corsair CMK64GX4M8X4200C19 8GB
内存RAM
SK Hynix HMT451U7BFR8C-RD 4GB
SK Hynix HMT451U7BFR8C-RD 4GB
Panram International Corporation PUD42400C154G2NJK 4GB
Panram International Corporation PUD42400C154G2NJK 4GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
G Skill Intl F4-4400C16-8GTRS 8GB
G Skill Intl F4-4400C16-8GTRS 8GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
A-DATA Technology AE4S240038G17-BHYA 8GB
A-DATA Technology AE4S240038G17-BHYA 8GB
内存RAM