PNY Electronics PNY 2GB vs AMD R748G2606U2S 8GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

AMD R748G2606U2S 8GB

AMD R748G2606U2S 8GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 61

左右 56% 更低的延时

AMD R748G2606U2S 8GB

需要考虑的原因
AMD R748G2606U2S 8GB

报告一个错误

更快的读取速度，GB/s

15 13.8

测试中的平均数值
更快的写入速度，GB/s

8.9 8.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

AMD R748G2606U2S 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 61
读取速度，GB/s

13.8 15.0
写入速度，GB/s

8.4 8.9
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2274 2028

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 4ATF51264AZ-2G3E1 4GB

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Kingston ACR512X64D3S13C9G 4GB

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Kingston KH2400C15D4/8 8GB

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Kingston 9905471-002.A00LF 2GB

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Kingston 9905713-008.A00G 4GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

AMD R748G2606U2S 8GB

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Kingston 9905403-061.A00LF 2GB

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G Skill Intl F4-3200C16-32GTRG 32GB

Samsung M378B5673EH1-CF8 2GB

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Crucial Technology BL16G32C16S4B.M16FE1 16GB

Crucial Technology BL16G32C16S4B.M16FE1 16GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Corsair CMH32GX4M4E3200C16 8GB

Corsair CMH32GX4M4E3200C16 8GB

Kingston 99U5474-038.A00LF 4GB

Kingston 99U5474-038.A00LF 4GB

G Skill Intl F4-3000C14-16GVK 16GB

G Skill Intl F4-3000C14-16GVK 16GB

Kingston 9965525-058.A00LF 8GB

Kingston 9965525-058.A00LF 8GB

G Skill Intl F4-3600C18-16GTZR 16GB

G Skill Intl F4-3600C18-16GTZR 16GB

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Kingston 99U5584-017.A00LF 4GB

Kingston 9905598-039.A00G 16GB

Kingston 9905598-039.A00G 16GB