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PNY Electronics PNY 2GB
Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

PNY Electronics PNY 2GB vs Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

总分
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分
star star star star star
Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB

差异 规格 评论

差异

PNY Electronics PNY 2GB 需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB 需要考虑的原因
Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    18 left arrow 27
    左右 -50% 更低的延时
  • 更快的读取速度，GB/s
    20.8 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.1 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
PNY Electronics PNY 2GB
Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 18
  • 读取速度，GB/s
    13.8 left arrow 20.8
  • 写入速度，GB/s
    8.4 left arrow 15.1
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 12 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2274 left arrow 3402

PNY Electronics PNY 2GB RAM的比较

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB RAM的比较

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston 9965516-112.A00LF 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB
Avexir Technologies Corporation DDR4-3600 CL17 8GB 8GB
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内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Crucial Technology CT16G4SFS8266.C8FB 16GB
Crucial Technology CT16G4SFS8266.C8FB 16GB
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Mushkin 991988 (996988) 4GB
Mushkin 991988 (996988) 4GB
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Shenzhen Micro Innovation Industry KF3200DDCD4 16GB
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Kingston 9905702-010.A00G 8GB
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Corsair CMK32GX4M4A2400C12 8GB
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AMD AE34G1601U1 4GB
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Corsair CMD64GX4M8A2400C14 8GB
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Micron Technology 16JTF51264HZ-1G6M1 4GB
A-DATA Technology DDR4 3600 8GB
A-DATA Technology DDR4 3600 8GB
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SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Crucial Technology BLS16G4D240FSE.16FAD 16GB
Crucial Technology BLS16G4D240FSE.16FAD 16GB
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G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F5-6400J3239G16G 16GB
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Micron Technology MTA8ATF1G64HZ-2G3B1 16GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
Transcend Information JM2666HSE-16G 16GB
Transcend Information JM2666HSE-16G 16GB
内存RAM
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
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Wilk Elektronik S.A. IR2400D464L17S/4G 4GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Micron Technology 18ASF1G72PDZ-2G6E1 8GB
Micron Technology 18ASF1G72PDZ-2G6E1 8GB
内存RAM
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Kingston 99U5471-056.A00LF 8GB
G Skill Intl F4-4400C18-8GTZR 8GB
G Skill Intl F4-4400C18-8GTZR 8GB
内存RAM
Samsung M393B5270CH0-CH9 4GB
Samsung M393B5270CH0-CH9 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N-UH 16GB
Hynix Semiconductor (Hyundai Electronics) HMA82GU6AFR8N
内存RAM