PNY Electronics PNY 2GB vs Corsair CMD128GX4M8B3000C16 16GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Corsair CMD128GX4M8B3000C16 16GB

Corsair CMD128GX4M8B3000C16 16GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

Corsair CMD128GX4M8B3000C16 16GB

需要考虑的原因
Corsair CMD128GX4M8B3000C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 27

左右 -4% 更低的延时
更快的读取速度，GB/s

14.8 13.8

测试中的平均数值
更快的写入速度，GB/s

10.2 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Corsair CMD128GX4M8B3000C16 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 26
读取速度，GB/s

13.8 14.8
写入速度，GB/s

8.4 10.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2274 3035

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M378B5673EH1-CF8 2GB

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Kingston ACR256X64D3S1333C9 2GB

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Kingston 99U5665-001.A00G 4GB

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Kingston CBD24D4S7S8ME-8 8GB