PNY Electronics PNY 2GB vs Corsair CMK16GX4M2A2666C18 8GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Corsair CMK16GX4M2A2666C18 8GB

Corsair CMK16GX4M2A2666C18 8GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

Corsair CMK16GX4M2A2666C18 8GB

需要考虑的原因
Corsair CMK16GX4M2A2666C18 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 27

左右 -17% 更低的延时
更快的读取速度，GB/s

18.2 13.8

测试中的平均数值
更快的写入速度，GB/s

14.2 8.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Corsair CMK16GX4M2A2666C18 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 23
读取速度，GB/s

13.8 18.2
写入速度，GB/s

8.4 14.2
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-21300, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2274 3245

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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SK Hynix HMA451U6AFR8N-TF 4GB

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Essencore Limited IM48GU48N21-FFFHM 8GB

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Crucial Technology BLT8G4D30AET4K.M8FE1 8GB

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G Skill Intl F5-6000J3636F16G 16GB

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Samsung M471B5173BH0-CK0 4GB

Samsung M471B5173BH0-CK0 4GB

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Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

A-DATA Technology AO1P24HCST2-BSCS 16GB

A-DATA Technology AO1P24HCST2-BSCS 16GB

Corsair CMK8GX4M1A2400C14 8GB

Corsair CMK8GX4M1A2400C14 8GB

Corsair CMK8GX4M1D2400C14 8GB

Corsair CMK8GX4M1D2400C14 8GB

SK Hynix HMT425S6CFR6A-PB 2GB

SK Hynix HMT425S6CFR6A-PB 2GB

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Corsair CMT16GX4M2K3600C16 8GB

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Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Chun Well Technology Holding Limited CL18-22-22 D4-3600 16GB

Chun Well Technology Holding Limited CL18-22-22 D4-3600

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

G Skill Intl F4-2666C15-16GVR 16GB

G Skill Intl F4-2666C15-16GVR 16GB