RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
PNY Electronics PNY 2GB
Crucial Technology BL16G32C16S4B.M16FE 16GB

PNY Electronics PNY 2GB vs Crucial Technology BL16G32C16S4B.M16FE 16GB

总分
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分
star star star star star
Crucial Technology BL16G32C16S4B.M16FE 16GB

Crucial Technology BL16G32C16S4B.M16FE 16GB

差异 规格 评论

差异

PNY Electronics PNY 2GB 需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 33
    左右 18% 更低的延时
Crucial Technology BL16G32C16S4B.M16FE 16GB 需要考虑的原因
Crucial Technology BL16G32C16S4B.M16FE 16GB
报告一个错误
  • 更快的读取速度，GB/s
    17.9 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.0 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 10600
    左右 2.01 更高的带宽

规格

完整的技术规格清单
PNY Electronics PNY 2GB
Crucial Technology BL16G32C16S4B.M16FE 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 33
  • 读取速度，GB/s
    13.8 left arrow 17.9
  • 写入速度，GB/s
    8.4 left arrow 15.0
  • 内存带宽，mbps
    10600 left arrow 21300
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2274 left arrow 3385

PNY Electronics PNY 2GB RAM的比较

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

Crucial Technology BL16G32C16S4B.M16FE 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Protocol Engines Kingrock 800 2GB 2GB
Protocol Engines Kingrock 800 2GB 2GB
Kingmax Semiconductor GLLH23F-18KIIP------ 16GB
Kingmax Semiconductor GLLH23F-18KIIP------ 16GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMSX64GX4M4A2400C16 16GB
Corsair CMSX64GX4M4A2400C16 16GB
内存RAM
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB
Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT16G4SFD824A.M16FE 16GB
Crucial Technology CT16G4SFD824A.M16FE 16GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Wilk Elektronik S.A. IR2133D464L15S/4G 4GB
Wilk Elektronik S.A. IR2133D464L15S/4G 4GB
内存RAM
Samsung M3 78T3354BZ0-CCC 256MB
Samsung M3 78T3354BZ0-CCC 256MB
Micron Technology 8ATF2G64HZ-2G3A1 16GB
Micron Technology 8ATF2G64HZ-2G3A1 16GB
内存RAM
Smart Modular SH564128FH8NZQNSCG 4GB
Smart Modular SH564128FH8NZQNSCG 4GB
Kingston KH2400C15D4/8 8GB
Kingston KH2400C15D4/8 8GB
内存RAM
Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
内存RAM
Kingston KP223C-ELD 2GB
Kingston KP223C-ELD 2GB
Micron Technology 8ATF51264HZ-2G1B1 4GB
Micron Technology 8ATF51264HZ-2G1B1 4GB
内存RAM
Samsung M393B5170FH0-CK0 4GB
Samsung M393B5170FH0-CK0 4GB
Corsair CMD16GX4M4B2133C10 4GB
Corsair CMD16GX4M4B2133C10 4GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
Crucial Technology CT16G4DFD8213.C16FDD 16GB
Crucial Technology CT16G4DFD8213.C16FDD 16GB
内存RAM
Samsung M3 78T2863EHS-CF7 1GB
Samsung M3 78T2863EHS-CF7 1GB
SK Hynix HMA81GR7AFR8N-VK 8GB
SK Hynix HMA81GR7AFR8N-VK 8GB
内存RAM
Kingston 99U5428-063.A00LF 8GB
Kingston 99U5428-063.A00LF 8GB
Crucial Technology BLS8G4D240FSA.16FBD 8GB
Crucial Technology BLS8G4D240FSA.16FBD 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Crucial Technology CT16G4SFD824A.M16FA 16GB
Crucial Technology CT16G4SFD824A.M16FA 16GB
内存RAM