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PNY Electronics PNY 2GB
Crucial Technology BLE4G4D30AEEA.K8FE 4GB

PNY Electronics PNY 2GB vs Crucial Technology BLE4G4D30AEEA.K8FE 4GB

总分
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分
star star star star star
Crucial Technology BLE4G4D30AEEA.K8FE 4GB

Crucial Technology BLE4G4D30AEEA.K8FE 4GB

差异 规格 评论

差异

PNY Electronics PNY 2GB 需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
Crucial Technology BLE4G4D30AEEA.K8FE 4GB 需要考虑的原因
Crucial Technology BLE4G4D30AEEA.K8FE 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 27
    左右 -4% 更低的延时
  • 更快的读取速度，GB/s
    19.6 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    15.8 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
PNY Electronics PNY 2GB
Crucial Technology BLE4G4D30AEEA.K8FE 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 26
  • 读取速度，GB/s
    13.8 left arrow 19.6
  • 写入速度，GB/s
    8.4 left arrow 15.8
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2274 left arrow 3252

PNY Electronics PNY 2GB RAM的比较

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

Crucial Technology BLE4G4D30AEEA.K8FE 4GB RAM的比较

Corsair CMD8GX3M2A2933C12 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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