RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
PNY Electronics PNY 2GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB
比较
PNY Electronics PNY 2GB vs Crucial Technology BLS16G4D30AESC.M16FE 16GB
总分
PNY Electronics PNY 2GB
总分
Crucial Technology BLS16G4D30AESC.M16FE 16GB
差异
规格
评论
差异
需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
低于PassMark测试中的延时,ns
27
28
左右 4% 更低的延时
需要考虑的原因
Crucial Technology BLS16G4D30AESC.M16FE 16GB
报告一个错误
更快的读取速度,GB/s
17.4
13.8
测试中的平均数值
更快的写入速度,GB/s
13.1
8.4
测试中的平均数值
更高的内存带宽,mbps
19200
10600
左右 1.81 更高的带宽
规格
完整的技术规格清单
PNY Electronics PNY 2GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
28
读取速度,GB/s
13.8
17.4
写入速度,GB/s
8.4
13.1
内存带宽,mbps
10600
19200
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度
7-7-7-20 / 1333 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2274
3437
PNY Electronics PNY 2GB RAM的比较
Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Crucial Technology CT51264BA1339.C16F 4GB
Kingston KCRXJ6-HYJ 16GB
Kingston 99U5584-004.A00LF 4GB
SK Hynix HMA82GS6JJR8N-VK 16GB
Corsair CMZ16GX3M2A2400C10 8GB
Crucial Technology CT8G4DFS832A.M8FJ 8GB
Kingston 9905403-515.A00LF 8GB
G Skill Intl F4-3600C16-8GTZNC 8GB
Samsung M393B2G70BH0-CK0 16GB
Crucial Technology CT8G4DFS8213.M8FB 8GB
Crucial Technology BLS8G4D26BFSC.16FE 8GB
Kingston 9905678-110.A00G 8GB
Samsung M378B5673FH0-CH9 2GB
Corsair CMT32GX4M2C3466C16 16GB
Samsung M393B2G70BH0-CK0 16GB
Xinshirui (Shenzhen) Electronics Co V01D4LF8GB528528266
Elpida EBE21UE8ACUA-8G-E 2GB
G Skill Intl F4-2400C17-16GSXF 16GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Crucial Technology CT8G4SFD8213.C16FBR2 8GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston XRGM6C-MIB 16GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology CT16G4DFD8213.C16FBR 16GB
Samsung DDR3 8GB 1600MHz 8GB
Crucial Technology CT8G4SFS824A.M8FE 8GB
Crucial Technology CT51264BD160B.C16F 4GB
Apacer Technology D12.2755BS.001 16GB
报告一个错误
×
Bug description
Source link