PNY Electronics PNY 2GB vs Crucial Technology CT16G4DFD8213.C16FDD 16GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Crucial Technology CT16G4DFD8213.C16FDD 16GB

Crucial Technology CT16G4DFD8213.C16FDD 16GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 34

左右 21% 更低的延时

Crucial Technology CT16G4DFD8213.C16FDD 16GB

需要考虑的原因
Crucial Technology CT16G4DFD8213.C16FDD 16GB

报告一个错误

更快的读取速度，GB/s

14.7 13.8

测试中的平均数值
更快的写入速度，GB/s

9.2 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Crucial Technology CT16G4DFD8213.C16FDD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 34
读取速度，GB/s

13.8 14.7
写入速度，GB/s

8.4 9.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2274 2597

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Samsung M471B5273EB0-CK0 4GB

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Avant Technology J642GU42J5213N1 16GB

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Micron Technology 16ATF2G64HZ-3G2E1 16GB

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMK32GX4M2C3200C18 16GB

Corsair CMK32GX4M2C3200C18 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

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Kingston ACR16D3LS1KBG/8G 8GB

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G Skill Intl F4-3600C19-16GSXWB 16GB