PNY Electronics PNY 2GB vs Crucial Technology CT16G4SFD8213.C16FBD 16GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Crucial Technology CT16G4SFD8213.C16FBD 16GB

Crucial Technology CT16G4SFD8213.C16FBD 16GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 35

左右 23% 更低的延时
更快的读取速度，GB/s

13.8 13.6

测试中的平均数值

Crucial Technology CT16G4SFD8213.C16FBD 16GB

需要考虑的原因
Crucial Technology CT16G4SFD8213.C16FBD 16GB

报告一个错误

更快的写入速度，GB/s

9.6 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Crucial Technology CT16G4SFD8213.C16FBD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 35
读取速度，GB/s

13.8 13.6
写入速度，GB/s

8.4 9.6
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2274 2468

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4DFS8266.K8FB 8GB

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Kingston 9905403-174.A00LF 2GB

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Corsair CMK128GX4M8X3600C18 16GB

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Corsair CMZ16GX3M2A2400C10 8GB

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G Skill Intl F4-2400C14-16GVK 16GB

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Kingston KTC1G-UDIMM 1GB

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Ramaxel Technology RMSA3260NA78HAF-2666 8GB

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Kingston 99U5723-002.A00G 8GB

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G Skill Intl F4-2666C15-8GRKB 8GB

Kingston KVR533D2N4 512MB

Kingston KVR533D2N4 512MB

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A-DATA Technology VDQVE1B16 2GB

A-DATA Technology VDQVE1B16 2GB

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Kingston 9905743-043.A00G 16GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

Apacer Technology 78.CAGPE.AUF0B 8GB

Apacer Technology 78.CAGPE.AUF0B 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Kingston 9965589-030.D01G 8GB

Kingston 9965589-030.D01G 8GB

Corsair CMSO4GX3M1C1600C11 4GB

Corsair CMSO4GX3M1C1600C11 4GB

Crucial Technology BL8G26C16U4W.8FD 8GB

Crucial Technology BL8G26C16U4W.8FD 8GB