PNY Electronics PNY 2GB vs Crucial Technology CT16G4SFD824A.M16FE 16GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Crucial Technology CT16G4SFD824A.M16FE 16GB

Crucial Technology CT16G4SFD824A.M16FE 16GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 37

左右 27% 更低的延时

Crucial Technology CT16G4SFD824A.M16FE 16GB

需要考虑的原因
Crucial Technology CT16G4SFD824A.M16FE 16GB

报告一个错误

更快的读取速度，GB/s

14.7 13.8

测试中的平均数值
更快的写入速度，GB/s

11.6 8.4

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Crucial Technology CT16G4SFD824A.M16FE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 37
读取速度，GB/s

13.8 14.7
写入速度，GB/s

8.4 11.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2274 2688

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston ACR256X64D3S1333C9 2GB

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Ramaxel Technology RMUA5110KE68H9F-2400 4GB

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Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

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Lexar Co Limited LD4AU016G-H2666G 16GB

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Kingston 9905403-444.A00LF 4GB

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Kingston 9905663-006.A00G 16GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Samsung M378A1K43CB2-CTD 8GB

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Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Mushkin MR[ABC]4U320GJJM8G 8GB

Mushkin MR[ABC]4U320GJJM8G 8GB

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G Skill Intl F2-8500CL5-2GBPI 2GB

Micron Technology 36ADS2G72PZ-2G1A1 16GB

Micron Technology 36ADS2G72PZ-2G1A1 16GB