PNY Electronics PNY 2GB vs Crucial Technology CT32G4SFD8266.C16FE 32GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Crucial Technology CT32G4SFD8266.C16FE 32GB

Crucial Technology CT32G4SFD8266.C16FE 32GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 40

左右 33% 更低的延时

Crucial Technology CT32G4SFD8266.C16FE 32GB

需要考虑的原因
Crucial Technology CT32G4SFD8266.C16FE 32GB

报告一个错误

更快的读取速度，GB/s

14.8 13.8

测试中的平均数值
更快的写入速度，GB/s

11.6 8.4

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Crucial Technology CT32G4SFD8266.C16FE 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 40
读取速度，GB/s

13.8 14.8
写入速度，GB/s

8.4 11.6
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2274 2786

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston KHX3200C18D4/4G 4GB

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PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Crucial Technology CT32G4SFD8266.C16FE 32GB

Crucial Technology CT32G4SFD8266.C16FE 32GB

Corsair CM2X1024-6400C4 1GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Micron Technology 8ATF1G64AZ-3G2E1 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

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G Skill Intl F4-3200C15-16GTZKO 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

MemxPro Inc. D4S8GHIOFFC 8GB

MemxPro Inc. D4S8GHIOFFC 8GB

Samsung M393B1G70BH0-YK0 8GB

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Kingston 9905624-010.A00G 4GB

Kingston 9905624-010.A00G 4GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

G Skill Intl F4-4400C19-8GTZSW 8GB

G Skill Intl F4-4400C19-8GTZSW 8GB