PNY Electronics PNY 2GB vs Crucial Technology CT8G4DFD8213.C16FHP 8GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

Crucial Technology CT8G4DFD8213.C16FHP 8GB

Crucial Technology CT8G4DFD8213.C16FHP 8GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

低于PassMark测试中的延时，ns

27 30

左右 10% 更低的延时

Crucial Technology CT8G4DFD8213.C16FHP 8GB

需要考虑的原因
Crucial Technology CT8G4DFD8213.C16FHP 8GB

报告一个错误

更快的读取速度，GB/s

15.2 13.8

测试中的平均数值
更快的写入速度，GB/s

9.0 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

Crucial Technology CT8G4DFD8213.C16FHP 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 30
读取速度，GB/s

13.8 15.2
写入速度，GB/s

8.4 9.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2274 2355

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston ACR256X64D3S1333C9 2GB

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Teikon TMA851U6AFR6N-UHHC 4GB

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Samsung M471B5273DH0-CH9 4GB

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Kingston 99U5584-005.A00LF 4GB

Kingston 99U5584-005.A00LF 4GB

Apacer Technology 78.D1GMM.AU10B 16GB

Apacer Technology 78.D1GMM.AU10B 16GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Kingston X3XCFP-HYA 8GB

Kingston X3XCFP-HYA 8GB

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Kingston 99U5584-005.A00LF 4GB

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Corsair CMK32GX4M2E3200C16 16GB

G Skill Intl F4-4000C18-8GVK 8GB

G Skill Intl F4-4000C18-8GVK 8GB

G Skill Intl F4-3200C16-8GTZB 8GB

G Skill Intl F4-3200C16-8GTZB 8GB