PNY Electronics PNY 2GB vs G Skill Intl F4-2800C15-8GTXG 8GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

G Skill Intl F4-2800C15-8GTXG 8GB

G Skill Intl F4-2800C15-8GTXG 8GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

G Skill Intl F4-2800C15-8GTXG 8GB

需要考虑的原因
G Skill Intl F4-2800C15-8GTXG 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 27

左右 -8% 更低的延时
更快的读取速度，GB/s

14.7 13.8

测试中的平均数值
更快的写入速度，GB/s

11.0 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

G Skill Intl F4-2800C15-8GTXG 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 25
读取速度，GB/s

13.8 14.7
写入速度，GB/s

8.4 11.0
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2274 2975

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT16G4SFD832A.M16FRS 16GB

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G Skill Intl F4-2800C15-8GVRB 8GB

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Kingston 9965525-155.A00LF 8GB

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Chun Well Technology Holding Limited MD4U1632160DCW 16GB

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Corsair CMV4GX4M1A2666C18 4GB

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Micron Technology 18ASF1G72AZ-2G1A1 8GB

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SK Hynix HMT325S6BFR8C-H9 2GB

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Corsair MK16GX44A2666C16 4GB

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G Skill Intl F4-3200C16-16GFX 16GB

Elpida EBJ41UF8BDU5-GN-F 4GB

Elpida EBJ41UF8BDU5-GN-F 4GB

Aquarius Production Company LLC 16G-D4-2666-MR 4GB

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Kingston 9965525-155.A00LF 8GB

Corsair CMD64GX4M4A2666C15 16GB

Corsair CMD64GX4M4A2666C15 16GB

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-3200C16-16GTRS 16GB

G Skill Intl F4-3200C16-16GTRS 16GB