PNY Electronics PNY 2GB vs G Skill Intl F4-3600C14-16GTZRA 16GB

总分

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分

G Skill Intl F4-3600C14-16GTZRA 16GB

G Skill Intl F4-3600C14-16GTZRA 16GB

差异规格评论

差异

PNY Electronics PNY 2GB

需要考虑的原因
PNY Electronics PNY 2GB

报告一个错误

G Skill Intl F4-3600C14-16GTZRA 16GB

需要考虑的原因
G Skill Intl F4-3600C14-16GTZRA 16GB

报告一个错误

更快的读取速度，GB/s

22.7 13.8

测试中的平均数值
更快的写入速度，GB/s

14.9 8.4

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

PNY Electronics PNY 2GB

G Skill Intl F4-3600C14-16GTZRA 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

27 27
读取速度，GB/s

13.8 22.7
写入速度，GB/s

8.4 14.9
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2274 3861

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4DFS824A.C8FDD1 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

Crucial Technology BLS4G4D240FSA.M8F 4GB

Crucial Technology BLS4G4D240FSA.M8F 4GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Patriot Memory (PDP Systems) 3600 C16 Series 8GB

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Corsair CMX4GX3M2A1600C9 2GB

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Gloway International (HK) STK2133C15-8GB 8GB

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Samsung M391B5673EH1-CH9 2GB

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Kingmax Semiconductor GSAG42F-18---------- 8GB