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PNY Electronics PNY 2GB
G Skill Intl F4-3600C18-32GTRG 32GB
比较
PNY Electronics PNY 2GB vs G Skill Intl F4-3600C18-32GTRG 32GB
总分
PNY Electronics PNY 2GB
总分
G Skill Intl F4-3600C18-32GTRG 32GB
差异
规格
评论
差异
需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
低于PassMark测试中的延时,ns
27
42
左右 36% 更低的延时
更快的读取速度,GB/s
13.8
12.9
测试中的平均数值
需要考虑的原因
G Skill Intl F4-3600C18-32GTRG 32GB
报告一个错误
更快的写入速度,GB/s
12.5
8.4
测试中的平均数值
更高的内存带宽,mbps
21300
10600
左右 2.01 更高的带宽
规格
完整的技术规格清单
PNY Electronics PNY 2GB
G Skill Intl F4-3600C18-32GTRG 32GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
27
42
读取速度,GB/s
13.8
12.9
写入速度,GB/s
8.4
12.5
内存带宽,mbps
10600
21300
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 8 9
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
7-7-7-20 / 1333 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2274
3126
PNY Electronics PNY 2GB RAM的比较
Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB
G Skill Intl F4-3600C18-32GTRG 32GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kllisre M393B1K70DH0-CK0 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GR7MFR8N
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Patriot Memory (PDP Systems) PSD432G32002S 32GB
Samsung M393B1G70BH0-YK0 8GB
Kingston 9905598-044.A00G 16GB
PNY Electronics PNY 2GB
G Skill Intl F4-3600C18-32GTRG 32GB
AMD R538G1601U2S-UO 8GB
Corsair CMK64GX4M4C3333C16 16GB
Kingston ACR256X64D3S1333C9 2GB
Hewlett-Packard 7EH68AA# 16GB
Samsung M471B5273DH0-CH9 4GB
Team Group Inc. TEAMGROUP-SD4-2133 8GB
Samsung M4 70T2864QZ3-CF7 1GB
Micron Technology 16ATF2G64HZ-2G3E2 16GB
Kingston ACR256X64D3S1333C9 2GB
Kllisre 99P54280002.A00LF 8GB
Samsung M471B5173QH0-YK0 4GB
Kingston 9905663-007.A00G 16GB
Kingston KVR16N11/8-SP 8GB
Kingston KHX2933C17S4/32G 32GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 4ATF51264AZ-2G3E1 4GB
Team Group Inc. Team-Elite-1333 4GB
V-Color Technology Inc. TN416G26D819-SB 16GB
Corsair CMZ16GX3M2A2400C10 8GB
Avexir Technologies Corporation DDR4-2133 CL15 8GB 8GB
报告一个错误
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Bug description
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