RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
PNY Electronics PNY 2GB
G Skill Intl F4-4000C18-8GTZR 8GB

PNY Electronics PNY 2GB vs G Skill Intl F4-4000C18-8GTZR 8GB

总分
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分
star star star star star
G Skill Intl F4-4000C18-8GTZR 8GB

G Skill Intl F4-4000C18-8GTZR 8GB

差异 规格 评论

差异

PNY Electronics PNY 2GB 需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 29
    左右 7% 更低的延时
G Skill Intl F4-4000C18-8GTZR 8GB 需要考虑的原因
G Skill Intl F4-4000C18-8GTZR 8GB
报告一个错误
  • 更快的读取速度，GB/s
    18 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    16.5 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
PNY Electronics PNY 2GB
G Skill Intl F4-4000C18-8GTZR 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 29
  • 读取速度，GB/s
    13.8 left arrow 18.0
  • 写入速度，GB/s
    8.4 left arrow 16.5
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2274 left arrow 3779

PNY Electronics PNY 2GB RAM的比较

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

G Skill Intl F4-4000C18-8GTZR 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Avant Technology F6451U66G1600G 4GB
Avant Technology F6451U66G1600G 4GB
Corsair CMK16GX4M4A2666C15 4GB
Corsair CMK16GX4M4A2666C15 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
OM Nanotech Pvt.Ltd V1D4S816GB2G82G83200 16GB
内存RAM
TwinMOS 8DHE3MN8-HATP 2GB
TwinMOS 8DHE3MN8-HATP 2GB
Kingston 9905702-150.A00G 8GB
Kingston 9905702-150.A00G 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
G Skill Intl F4-2400C17-8GVR 8GB
G Skill Intl F4-2400C17-8GVR 8GB
内存RAM
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT51264BD160B.C16F 4GB
Kingston 9905663-016.A00G 16GB
Kingston 9905663-016.A00G 16GB
内存RAM
SK Hynix HMT151R7TFR4C-H9 4GB
SK Hynix HMT151R7TFR4C-H9 4GB
AMD R7S48G2400U2S 8GB
AMD R7S48G2400U2S 8GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Corsair CMW16GX4M1Z3600C18 16GB
Corsair CMW16GX4M1Z3600C18 16GB
内存RAM
Kingston 99U5469-035.A00LF 4GB
Kingston 99U5469-035.A00LF 4GB
Kingston TSB16D3LS1KBG/4G 4GB
Kingston TSB16D3LS1KBG/4G 4GB
内存RAM
Corsair CMX8GX3M2A2000C9 4GB
Corsair CMX8GX3M2A2000C9 4GB
Crucial Technology BL8G24C16U4B.8FD 8GB
Crucial Technology BL8G24C16U4B.8FD 8GB
内存RAM
SK Hynix HYMP112U64CP8-Y5 1GB
SK Hynix HYMP112U64CP8-Y5 1GB
G Skill Intl F4-3400C16-16GVK 16GB
G Skill Intl F4-3400C16-16GVK 16GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Kingston 99U5702-020.A00G 8GB
Kingston 99U5702-020.A00G 8GB
内存RAM
AMD AE34G1601U1 4GB
AMD AE34G1601U1 4GB
Corsair CMK16GX4M2F4400C19 8GB
Corsair CMK16GX4M2F4400C19 8GB
内存RAM
Kingston 99U5469-035.A00LF 4GB
Kingston 99U5469-035.A00LF 4GB
G Skill Intl F4-2400C14-16GRK 16GB
G Skill Intl F4-2400C14-16GRK 16GB
内存RAM
Kingston KHX1600C9S3L/4G 4GB
Kingston KHX1600C9S3L/4G 4GB
Kingston ACR24D4S7S1MB-4 4GB
Kingston ACR24D4S7S1MB-4 4GB
内存RAM