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PNY Electronics PNY 2GB
Gloway International Co. Ltd. STK4U2400D17082C 8GB

PNY Electronics PNY 2GB vs Gloway International Co. Ltd. STK4U2400D17082C 8GB

总分
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分
star star star star star
Gloway International Co. Ltd. STK4U2400D17082C 8GB

Gloway International Co. Ltd. STK4U2400D17082C 8GB

差异 规格 评论

差异

PNY Electronics PNY 2GB 需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
Gloway International Co. Ltd. STK4U2400D17082C 8GB 需要考虑的原因
Gloway International Co. Ltd. STK4U2400D17082C 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 27
    左右 -23% 更低的延时
  • 更快的读取速度，GB/s
    17.5 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.9 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
PNY Electronics PNY 2GB
Gloway International Co. Ltd. STK4U2400D17082C 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 22
  • 读取速度，GB/s
    13.8 left arrow 17.5
  • 写入速度，GB/s
    8.4 left arrow 12.9
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2274 left arrow 3083

PNY Electronics PNY 2GB RAM的比较

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

Gloway International Co. Ltd. STK4U2400D17082C 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
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最新比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
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Kingston 9905403-011.A03LF 2GB
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SK Hynix HMA84GL7AFR4N-UH 32GB
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内存RAM
Kingston 99U5458-008.A00LF 4GB
Kingston 99U5458-008.A00LF 4GB
Kingston XWM8G1-MIE 32GB
Kingston XWM8G1-MIE 32GB
内存RAM
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SK Hynix HYMP512S64CP8-Y5 1GB
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内存RAM
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Samsung M471B5273CH0-CH9 4GB
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Crucial Technology CT8G4DFRA266.M4FE 8GB
内存RAM
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Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology BLS16G4D240FSB.16FBR 16GB
Crucial Technology BLS16G4D240FSB.16FBR 16GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Crucial Technology CT8G4SFRA32A.C4FE 8GB
Crucial Technology CT8G4SFRA32A.C4FE 8GB
内存RAM
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Team Group Inc. Team-Elite-1333 4GB
Crucial Technology CT8G4DFD824A.C16FBD1 8GB
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内存RAM
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Samsung M471B5173BH0-CK0 4GB
Corsair CMT64GX4M8Z3600C16 8GB
Corsair CMT64GX4M8Z3600C16 8GB
内存RAM