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PNY Electronics PNY 2GB
Golden Empire CL14-16-16 D4-2400 16GB

PNY Electronics PNY 2GB vs Golden Empire CL14-16-16 D4-2400 16GB

总分
star star star star star
PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

总分
star star star star star
Golden Empire CL14-16-16 D4-2400 16GB

Golden Empire CL14-16-16 D4-2400 16GB

差异 规格 评论

差异

PNY Electronics PNY 2GB 需要考虑的原因
PNY Electronics PNY 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    27 left arrow 28
    左右 4% 更低的延时
Golden Empire CL14-16-16 D4-2400 16GB 需要考虑的原因
Golden Empire CL14-16-16 D4-2400 16GB
报告一个错误
  • 更快的读取速度，GB/s
    16.5 left arrow 13.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    12.6 left arrow 8.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
PNY Electronics PNY 2GB
Golden Empire CL14-16-16 D4-2400 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    27 left arrow 28
  • 读取速度，GB/s
    13.8 left arrow 16.5
  • 写入速度，GB/s
    8.4 left arrow 12.6
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2274 left arrow 2903

PNY Electronics PNY 2GB RAM的比较

Kingston 9965426-130.A00LF 4GB
Carry Technology Co. Ltd. U3A2G73-13G9HE2B00 2GB

Golden Empire CL14-16-16 D4-2400 16GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Corsair CMSX32GX4M2A2666C18 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Golden Empire CL14-16-16 D4-2400 16GB
Golden Empire CL14-16-16 D4-2400 16GB
内存RAM
Crucial Technology CT102464BF160B.C16 8GB
Crucial Technology CT102464BF160B.C16 8GB
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Golden Empire CL18-22-22 D4-3600 16GB
内存RAM
Kingston KF552C40-16 16GB
Kingston KF552C40-16 16GB
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Essencore Limited IM48GU88N26-GIIHA 8GB
内存RAM
Micron Technology 36ASF4G72LZ-2G3B1 32GB
Micron Technology 36ASF4G72LZ-2G3B1 32GB
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Samsung M393A1G43DB1-CRC 8GB
内存RAM
Crucial Technology CT102464BF160B.C16 8GB
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Crucial Technology CT16G4DFD8266.C16FD1 16GB
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G Skill Intl F4-3600C17-8GVK 8GB
内存RAM
Corsair CM2X1024-8500C5D 1GB
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Samsung M391A2K43BB1-CTD 16GB
Samsung M391A2K43BB1-CTD 16GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
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Corsair CMD8GX4M2B3600C18 4GB
内存RAM
Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
G Skill Intl F4-2400C15-8GTZR 8GB
G Skill Intl F4-2400C15-8GTZR 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
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Teikon TMA851U6AFR6N-UHHC 4GB
内存RAM
Crucial Technology CT102464BF160B-16F 8GB
Crucial Technology CT102464BF160B-16F 8GB
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Crucial Technology CT4G4SFS624A.C4FB 4GB
内存RAM
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Samsung M471B5173QH0-YK0 4GB
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G Skill Intl F4-3466C16-16GTZSW 16GB
内存RAM
SK Hynix HYMP125U64CP8-S6 2GB
SK Hynix HYMP125U64CP8-S6 2GB
Gloway International Co. Ltd. TYP4U3200E16082C 8GB
Gloway International Co. Ltd. TYP4U3200E16082C 8GB
内存RAM